NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations
Negative bias temperature instability (NBTI) has become an important reliability concern for nano-scaled complementary metal oxide (CMOS) devices. This paper presents the effect of NBTI for a 45 nm advanced-process high-k dielectric with metal gate PMOS transistor. The device had incorporated advanc...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Elsevier
2010
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/12491/ |
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