Investigation of stress effect technology on electrical characteristics of 90nm CMOS devices / Hanim Hussin, Ahmad Sabirin Zoolfakar and Rosmalini Ab Kadir
The implementation of this research is to find a solution for CMOS devices problems related to hot carrier effect due to advanced technology node where the devices are scaled in nano-region. Stress effect or known as strained silicon technology is capable to increase performance of CMOS devices in t...
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| Main Authors: | , , |
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| Format: | Research Reports |
| Language: | en |
| Published: |
2011
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| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/61681/1/61681.pdf https://ir.uitm.edu.my/id/eprint/61681/ |
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