Gas sensitive al membarane on n-type gan schottky diode / A. Y Hudeish, A. Abdul Aziz and Z. Hassan
In this work, we have studied and fabricated a new, simple and small-size N2 and H2 sensitive Aluminum (AI) membrane/semiconductor (Al/n-GaN) Schottky diode sensor. Experimental results revealed that, during the hydride or nitride formation process, the time response increased and enhanced with temp...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | en |
| Published: |
2004
|
| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/50515/1/50515.PDF https://ir.uitm.edu.my/id/eprint/50515/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|