Investigation of effect gate size's scaling in NMOSFET on current-voltage (I-V) characteristic / Mazuin Ab Rahman

MOSFET is metal oxide semiconductor field effect transistor have been scale down in the critical device parameter to achieve highest integration density and performance. Smaller size of transistor give higher speed, it is consumes very low power and has a high yield of working devices. This report p...

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Bibliographic Details

Main Author:	Ab Rahman, Mazuin
Format:	Student Project
Language:	en
Published:	2010
Subjects:	Electric current (General)
Online Access:	https://ir.uitm.edu.my/id/eprint/46832/1/46832.pdf https://ir.uitm.edu.my/id/eprint/46832/
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