Investigation of effect gate size's scaling in NMOSFET on current-voltage (I-V) characteristic / Mazuin Ab Rahman
MOSFET is metal oxide semiconductor field effect transistor have been scale down in the critical device parameter to achieve highest integration density and performance. Smaller size of transistor give higher speed, it is consumes very low power and has a high yield of working devices. This report p...
Saved in:
| Main Author: | |
|---|---|
| Format: | Student Project |
| Language: | en |
| Published: |
2010
|
| Subjects: | |
| Online Access: | https://ir.uitm.edu.my/id/eprint/46832/1/46832.pdf https://ir.uitm.edu.my/id/eprint/46832/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|