Study on the effect of short gate length on 65nm NMOS transistor using SILVACO TCAD / Azira Ahmad Tarmizi
The aim of this work is to design and study on the effect of short gate length of 65nm NMOS transistor using SILVACO TCAD. A 65nm NMOS was designed and fabricated to study its electrical characteristics. To simulate the electrical performances of the 65nm NMOS, ATHENA and ATLAS of SILVACO TCAD tools...
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| Format: | Student Project |
| Language: | en |
| Published: |
2020
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| Online Access: | https://ir.uitm.edu.my/id/eprint/39846/1/39846.pdf https://ir.uitm.edu.my/id/eprint/39846/ |
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