The effect of oxide thickness on C-V characteristics for NMOS: article
This paper is study on the effect of oxide thickness (t₀ᵪ) on C-V characteristics for NMOS. The project being done by using SILVACO TCAD software of using ATHENA and ATLAS simulator in order to fabricate the NMOS, extract oxide thickness and see the effect to C-V characteristics. Here, t₀ᵪ of 10.13n...
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| Main Author: | |
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| Format: | Article |
| Language: | en |
| Published: |
2009
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| Online Access: | https://ir.uitm.edu.my/id/eprint/125219/1/125219.pdf https://ir.uitm.edu.my/id/eprint/125219/ |
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