Optimization of gate dielectric thickness in PMOS structure using silvaco TCD tools

The dielectric layer in Metal Oxide Semiconductor Field Effect transistor (MOSFET) is a layer of very thin oxide which serves as insulator between the gate and channel. It’s also known as gate oxide or gate dielectric. This paper presents the effects of gate oxide thickness on p-channel MOSFET (PMOS...

Full description

Bibliographic Details

Main Author:	Bakri, Ayub
Format:	Student Project
Language:	en
Published:	2008
Subjects:	Apparatus and materials Dielectric devices
Online Access:	https://ir.uitm.edu.my/id/eprint/123003/1/123003.pdf https://ir.uitm.edu.my/id/eprint/123003/
Tags:	Add Tag No Tags, Be the first to tag this record!