Optimization of gate dielectric thickness in PMOS structure using silvaco TCD tools
The dielectric layer in Metal Oxide Semiconductor Field Effect transistor (MOSFET) is a layer of very thin oxide which serves as insulator between the gate and channel. It’s also known as gate oxide or gate dielectric. This paper presents the effects of gate oxide thickness on p-channel MOSFET (PMOS...
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| Format: | Student Project |
| Language: | en |
| Published: |
2008
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| Online Access: | https://ir.uitm.edu.my/id/eprint/123003/1/123003.pdf https://ir.uitm.edu.my/id/eprint/123003/ |
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