Doping characteristics of zinc oxide thin films deposited by thermal chemical vapour deposition

Nitrogen (N)-doped Zinc Oxide (ZnO) films were deposited on glass substrate by thermal chemical vapour deposition (CVD) process. Nitrogen gas with different flow rate was used as a dopant source. The effects of varying the carrier gas flow rate to the Zinc Oxide thin film electrical properties were...

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Bibliographic Details

Main Author:	Rosley, Nor Syazwani
Format:	Student Project
Language:	en
Published:	2010
Subjects:	TK Electrical engineering. Electronics. Nuclear engineering Metal oxide semiconductors
Online Access:	https://ir.uitm.edu.my/id/eprint/121774/1/121774.pdf https://ir.uitm.edu.my/id/eprint/121774/
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