Doping characteristics of zinc oxide thin films deposited by thermal chemical vapour deposition
Nitrogen (N)-doped Zinc Oxide (ZnO) films were deposited on glass substrate by thermal chemical vapour deposition (CVD) process. Nitrogen gas with different flow rate was used as a dopant source. The effects of varying the carrier gas flow rate to the Zinc Oxide thin film electrical properties were...
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| Format: | Student Project |
| Language: | en |
| Published: |
2010
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| Online Access: | https://ir.uitm.edu.my/id/eprint/121774/1/121774.pdf https://ir.uitm.edu.my/id/eprint/121774/ |
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