Simulation of 65nm vertical double gate NMOS using Silvaco TCAD tools: article / Mohd Ridzuan Mohd Nayin @ Mohd Nayan
This paper has demonstrated structure design and simulating electrical characteristic of Vertical Double Gate nchannel MOSFET (NMOS) using Silvaco TCAD Tools. Objectives of this study are to design 65nm Vertical NMOS, meet the specification provided by International Technology Roadmap Semiconductor...
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| Format: | Article |
| Language: | en |
| Published: |
2009
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| Online Access: | https://ir.uitm.edu.my/id/eprint/117959/1/117959.pdf https://ir.uitm.edu.my/id/eprint/117959/ |
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