Characterization of trench Schottky diode with trench bottom oxide (TBO) process: article / Nurul Izzati Mohammad Noh, Mohd Rofei Mat Hussin and Maizatul Zolkapli

A new Schottky diode structure namely as TBO Trench Schottky diode is proposed. Introduction of TBO process to the trench Schottky diode has shown better device characteristics. In this study, the trench bottom oxide (TBO) process was developed in order to increased reverse blocking voltage of Schot...

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Bibliographic Details
Main Authors: Mohammad Noh, Nurul Izzati, Mat Hussin, Mohd Rofei, Zolkapli, Maizatul
Format: Article
Language:en
Published: 2012
Subjects:
Online Access:https://ir.uitm.edu.my/id/eprint/115604/1/115604.pdf
https://ir.uitm.edu.my/id/eprint/115604/
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