Simulation of double stack dielectric MOS capacitor / Farhatasya Amran

This paper reports the study about the relationship of Capacitance-Voltage (C-V) characteristics in MOS structure devices characterization. All these things are completely related with the experimental of double stack dielectric MOS capacitor in range of 35nm, 65nm and 95nm Silicon Oxide thickness n...

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Bibliographic Details

Main Author:	Amran, Farhatasya
Format:	Thesis
Language:	en
Published:	2013
Subjects:	TK Electrical engineering. Electronics. Nuclear engineering Metal oxide semiconductors
Online Access:	https://ir.uitm.edu.my/id/eprint/115148/1/115148.pdf https://ir.uitm.edu.my/id/eprint/115148/
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