Simulations of the strained S10.3GEO.7/S1 for NMOS
The aim of this paper is to design the strained Si₀̣̣₃Ge₀̣₇ on relaxed Si N-MOS semiconductor and to compare the electrical characteristics with the conventional Si NMOS using a device simulator SILVACO. In the first part, the simulation of basic fabrication processes to create the material of conve...
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| Format: | Student Project |
| Language: | en |
| Published: |
2006
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| Online Access: | https://ir.uitm.edu.my/id/eprint/114944/1/114944.pdf https://ir.uitm.edu.my/id/eprint/114944/ |
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