Simulation of drain induced barrier lowering (DIBL) in metal oxide semiconductor field effect transistor (MOSFET)

This paper shows Simulation of Drain Induced Barrier Lowering (DIBL) in Metal Oxide Semiconductor Field Effect Transistor (MOSFET)”. The research and study on this is investigated. Using software from SILVACO International, the simulation of the N-channel metal oxide semiconductor (NMOS) can be stud...

Full description

Bibliographic Details

Main Author:	Nelson, Florence Elna
Format:	Student Project
Language:	en
Published:	2013
Subjects:	TK Electrical engineering. Electronics. Nuclear engineering Telecommunication
Online Access:	https://ir.uitm.edu.my/id/eprint/114348/1/114348.pdf https://ir.uitm.edu.my/id/eprint/114348/
Tags:	Add Tag No Tags, Be the first to tag this record!