Simulation of drain induced barrier lowering (DIBL) in metal oxide semiconductor field effect transistor (MOSFET)
This paper shows Simulation of Drain Induced Barrier Lowering (DIBL) in Metal Oxide Semiconductor Field Effect Transistor (MOSFET)”. The research and study on this is investigated. Using software from SILVACO International, the simulation of the N-channel metal oxide semiconductor (NMOS) can be stud...
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| Format: | Student Project |
| Language: | en |
| Published: |
2013
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| Online Access: | https://ir.uitm.edu.my/id/eprint/114348/1/114348.pdf https://ir.uitm.edu.my/id/eprint/114348/ |
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