Investigation of silicon nitride capping layer and embedded silicon germanium effect on 90 nm CMOS devices: article / Norlina Mohd Zain
This paper highlights the effect of Si3N4 capping layer, embedded SiGe in the source/drain and SiGe layer on the bottom of the strained silicon for strained-silicon technology effect on 90 nm Complementary Metal Oxide Semiconductor (CMOS) performance focusing on threshold voltage and drain current p...
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| Format: | Article |
| Language: | en |
| Published: |
2010
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| Online Access: | https://ir.uitm.edu.my/id/eprint/113342/1/113342.pdf https://ir.uitm.edu.my/id/eprint/113342/ |
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