FRGS 15–244–0485 Final Report: Novel Model on Leakage Current Mechanisms of Radiation Hard Silicon Carbide Schottky Diodes
The degradation of high-voltage commercial Silicon Carbide Schottky power diodes from ROHM Semiconductor Co., and CREE, Inc., under different doses ranging from 2 to 15MGy of high energy (3.0 MeV) electrons is successfully studied and reported. Current-voltage and capacitance-voltage characterizatio...
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| Format: | Monograph |
| Language: | en |
| Published: |
2018
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| Online Access: | http://irep.iium.edu.my/64439/1/Profile%20of%20Final%20Report_FRGS%20Schottky%20Diode.pdf http://irep.iium.edu.my/64439/ |
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