Reduction of cavity length dependence and improvement of characteristics of 1.55 µm quantum dot based LASER using Indium Nitride

This paper presents the improvement of certain important characteristics of 1.55 µm laser by reducing the dependence of cavity length using InN based quantum dot in the active layer of the device structure. The improvement of these characteristics has been investigated in terms of ultra low threshol...

Full description

Bibliographic Details

Main Authors:	Humayun, M A, Khan, Sheroz, Alam, A. H. M. Zahirul, AbdulMalek, MohamedFareq, Rashid, M. A.
Format:	Article
Language:	en en en
Published:	INOE Publishing House 2017
Subjects:	TK Electrical engineering. Electronics Nuclear engineering TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/57384/1/2Humayun.pdf http://irep.iium.edu.my/57384/7/57384_Reduction%20of%20cavity%20length%20dependence%20and%20improvement%20of%20characteristics_SCOPUS.pdf http://irep.iium.edu.my/57384/8/57384_Reduction%20of%20cavity%20length%20dependence%20and%20improvement%20of%20characteristics_WOS.pdf http://irep.iium.edu.my/57384/ https://joam.inoe.ro/index.php?option=magazine&op=view&idu=4102&catid=103
Tags:	Add Tag No Tags, Be the first to tag this record!