Correlation between defect density and current leakage in InAs∕GaAs quantum dot-in-well structures

We present a study of InAs/GaAs quantum dot-in-well �DWELL� material using transmission electron microscopy and leakage current-voltage measurements. The spacer layers between the DWELL layers have a variety of annealing and growth temperatures. We show that there is a strong correlation between spa...

Full description

Bibliographic Details

Main Authors:	Sanchez, A. M., Beanland, R., Hasbullah, Nurul Fadzlin, Hopkinson, M., David, J. P. R.
Format:	Article
Language:	en
Published:	American Institute of Physics 2009
Subjects:	TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Online Access:	http://irep.iium.edu.my/17647/1/Correlation_between_defect_density_and_current_leakage_-_Sanchez_JAP_2009.pdf http://irep.iium.edu.my/17647/ http://dx.doi.org/10.1063/1.3168492
Tags:	Add Tag No Tags, Be the first to tag this record!