Leakage current mechanisms in Silicon Carbide MOSFETs - A review

MOSFETs are integral components in modern electronics, renowned for their efficiency and performance. However, leak age currents, including drain-source (IDSS) and gate-source (IGSS) currents, pose significant challenges to device reliability and overall system efficiency, leading to issues such as...

Full description

Bibliographic Details

Main Authors:	Baba, Tamana, Hasbullah, Nurul Fadzlin, Saidin, Norazlina
Format:	Article
Language:	en
Published:	Springer Science and Business Media LLC 2025
Subjects:	TK9001 Nuclear engineering. Atomic power
Online Access:	http://irep.iium.edu.my/125415/1/Leakage%20Current%20Mechanisms%20in%20Silicon%20Carbide%20MOSFETs%20-%20A%20Review.pdf http://irep.iium.edu.my/125415/ https://link.springer.com/article/10.1007/s42341-025-00668-y#citeas
Tags:	Add Tag No Tags, Be the first to tag this record!