Leakage current mechanisms in Silicon Carbide MOSFETs - A review
MOSFETs are integral components in modern electronics, renowned for their efficiency and performance. However, leak age currents, including drain-source (IDSS) and gate-source (IGSS) currents, pose significant challenges to device reliability and overall system efficiency, leading to issues such as...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | en |
| Published: |
Springer Science and Business Media LLC
2025
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/125415/1/Leakage%20Current%20Mechanisms%20in%20Silicon%20Carbide%20MOSFETs%20-%20A%20Review.pdf http://irep.iium.edu.my/125415/ https://link.springer.com/article/10.1007/s42341-025-00668-y#citeas |
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