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Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

The research interest in the field of carbon nanotube field effect transistors (CNTFETs) in the post Moore era has witnessed a rapid growth primarily due to the fact that the conventional silicon based complementary metal oxide semiconductor (CMOS) devices are approaching its fundamental scaling lim...

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Main Authors: Zahoor, F., Hanif, M., Isyaku Bature, U., Bodapati, S., Chattopadhyay, A., Azmadi Hussin, F., Abbas, H., Merchant, F., Bashir, F.
Format: Article
Published: Institute of Physics 2023
Online Access:http://scholars.utp.edu.my/id/eprint/37454/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85166937186&doi=10.1088%2f1402-4896%2face855&partnerID=40&md5=9192087e9b3eed3706a345a3db4aab68
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spelling oai:scholars.utp.edu.my:374542023-10-04T13:14:35Z http://scholars.utp.edu.my/id/eprint/37454/ Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications Zahoor, F. Hanif, M. Isyaku Bature, U. Bodapati, S. Chattopadhyay, A. Azmadi Hussin, F. Abbas, H. Merchant, F. Bashir, F. The research interest in the field of carbon nanotube field effect transistors (CNTFETs) in the post Moore era has witnessed a rapid growth primarily due to the fact that the conventional silicon based complementary metal oxide semiconductor (CMOS) devices are approaching its fundamental scaling limits. This has led to significant interest among the researchers to examine novel device technologies utilizing different materials to sustain the scaling limits of the modern day integrated circuits. Among various material alternatives, carbon nanotubes (CNTs) have been extensively investigated owing to their desirable properties such as minimal short channel effects, high mobility, and high normalized drive currents. CNTs form the most important component of CNTFETs, which are being viewed as the most feasible alternatives for the replacement of silicon transistors. In this manuscript, detailed description of the recent advances of state of the art in the field of CNTFETs with emphasis on the most broadly impactful applications for which they are being employed is presented. The future prospects of CNTFETs while considering aggressively scaled transistor technologies are also briefly discussed. © 2023 IOP Publishing Ltd. Institute of Physics 2023 Article NonPeerReviewed Zahoor, F. and Hanif, M. and Isyaku Bature, U. and Bodapati, S. and Chattopadhyay, A. and Azmadi Hussin, F. and Abbas, H. and Merchant, F. and Bashir, F. (2023) Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications. Physica Scripta, 98 (8). ISSN 00318949 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85166937186&doi=10.1088%2f1402-4896%2face855&partnerID=40&md5=9192087e9b3eed3706a345a3db4aab68 10.1088/1402-4896/ace855 10.1088/1402-4896/ace855 10.1088/1402-4896/ace855
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
description The research interest in the field of carbon nanotube field effect transistors (CNTFETs) in the post Moore era has witnessed a rapid growth primarily due to the fact that the conventional silicon based complementary metal oxide semiconductor (CMOS) devices are approaching its fundamental scaling limits. This has led to significant interest among the researchers to examine novel device technologies utilizing different materials to sustain the scaling limits of the modern day integrated circuits. Among various material alternatives, carbon nanotubes (CNTs) have been extensively investigated owing to their desirable properties such as minimal short channel effects, high mobility, and high normalized drive currents. CNTs form the most important component of CNTFETs, which are being viewed as the most feasible alternatives for the replacement of silicon transistors. In this manuscript, detailed description of the recent advances of state of the art in the field of CNTFETs with emphasis on the most broadly impactful applications for which they are being employed is presented. The future prospects of CNTFETs while considering aggressively scaled transistor technologies are also briefly discussed. © 2023 IOP Publishing Ltd.
format Article
author Zahoor, F.
Hanif, M.
Isyaku Bature, U.
Bodapati, S.
Chattopadhyay, A.
Azmadi Hussin, F.
Abbas, H.
Merchant, F.
Bashir, F.
spellingShingle Zahoor, F.
Hanif, M.
Isyaku Bature, U.
Bodapati, S.
Chattopadhyay, A.
Azmadi Hussin, F.
Abbas, H.
Merchant, F.
Bashir, F.
Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications
author_facet Zahoor, F.
Hanif, M.
Isyaku Bature, U.
Bodapati, S.
Chattopadhyay, A.
Azmadi Hussin, F.
Abbas, H.
Merchant, F.
Bashir, F.
author_sort Zahoor, F.
title Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications
title_short Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications
title_full Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications
title_fullStr Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications
title_full_unstemmed Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications
title_sort carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications
publisher Institute of Physics
publishDate 2023
url http://scholars.utp.edu.my/id/eprint/37454/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85166937186&doi=10.1088%2f1402-4896%2face855&partnerID=40&md5=9192087e9b3eed3706a345a3db4aab68
_version_ 1779441385475145728
score 13.211869

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