Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector
Described are the design and characterisation of an ultra-low-power temperature level detector (TLD) and temperature sensor based on a silicon-on-insulator (SOI) CMOS integrated circuit (IC) for harsh environment applications. Since this IC is mainly for harsh environment applications (e.g. high tem...
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my.utp.eprints.90002013-10-25T02:16:03Z Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector Assaad, Maher Boufouss, Elhafed Gerard, Pierre Francis, Laurent Flandre, Denis TK Electrical engineering. Electronics Nuclear engineering Described are the design and characterisation of an ultra-low-power temperature level detector (TLD) and temperature sensor based on a silicon-on-insulator (SOI) CMOS integrated circuit (IC) for harsh environment applications. Since this IC is mainly for harsh environment applications (e.g. high temperatures and radiations), it has been designed and manufactured using the 1 μm high-temperature SOI-CMOS technology provided by X-FAB. The measured power dissipation of the TLD circuit is 9 mW at a supply voltage of 5 V and temperature of 27 °C, according to the measurement results of the manufactured design. 2012 Citation Index Journal PeerReviewed application/pdf http://eprints.utp.edu.my/9000/1/stamp.jsp_tp%3D%26arnumber%3D6235155%26tag%3D1 Assaad, Maher and Boufouss, Elhafed and Gerard, Pierre and Francis, Laurent and Flandre, Denis (2012) Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector. [Citation Index Journal] http://eprints.utp.edu.my/9000/ |
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TK Electrical engineering. Electronics Nuclear engineering Assaad, Maher Boufouss, Elhafed Gerard, Pierre Francis, Laurent Flandre, Denis Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector |
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Described are the design and characterisation of an ultra-low-power temperature level detector (TLD) and temperature sensor based on a silicon-on-insulator (SOI) CMOS integrated circuit (IC) for harsh environment applications. Since this IC is mainly for harsh environment applications (e.g. high temperatures and radiations), it has been designed and manufactured using the 1 μm high-temperature SOI-CMOS technology provided by X-FAB. The measured power dissipation of the TLD circuit is 9 mW at a supply voltage of 5 V and temperature of 27 °C, according to the measurement results of the manufactured design. |
format |
Citation Index Journal |
author |
Assaad, Maher Boufouss, Elhafed Gerard, Pierre Francis, Laurent Flandre, Denis |
author_facet |
Assaad, Maher Boufouss, Elhafed Gerard, Pierre Francis, Laurent Flandre, Denis |
author_sort |
Assaad, Maher |
title |
Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector |
title_short |
Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector |
title_full |
Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector |
title_fullStr |
Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector |
title_full_unstemmed |
Design and characterisation of ultra-low-power SOI-CMOS IC temperature level detector |
title_sort |
design and characterisation of ultra-low-power soi-cmos ic temperature level detector |
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2012 |
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http://eprints.utp.edu.my/9000/1/stamp.jsp_tp%3D%26arnumber%3D6235155%26tag%3D1 http://eprints.utp.edu.my/9000/ |
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13.211869 |