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Chemically amplified molecular resists for electron beam lithography

Molecular resists, such as fullerene and triphenylene derivatives, use small carbon rich molecules, which give the potential for greater resolution, lower line edge roughness and higher etch durability than traditional polymeric materials. Their main limitation has been low sensitivity to irradiat...

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Main Authors: Robinson, A.P.G, Mohd Zaid, Hasnah
Format: Article
Published: 2006
Subjects:
QC Physics
Online Access:http://eprints.utp.edu.my/882/1/Micro_Eng_2006.pdf
http://eprints.utp.edu.my/882/
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spelling my.utp.eprints.8822017-01-19T08:27:21Z Chemically amplified molecular resists for electron beam lithography Robinson, A.P.G Mohd Zaid, Hasnah QC Physics Molecular resists, such as fullerene and triphenylene derivatives, use small carbon rich molecules, which give the potential for greater resolution, lower line edge roughness and higher etch durability than traditional polymeric materials. Their main limitation has been low sensitivity to irradiation. Here the chemical amplification of fullerene and triphenylene negative tone molecular resists is demonstrated. The sensitivity of a fullerene resist to 20 keV electrons was improved from 550 to 8 lC/cm2 by addition of an epoxide crosslinker and photoinitiator. Lines of width 25 nm were written using 30 keV electrons. A triphenylene with pendant epoxy groups was also studied. In this case the sensitivity reached on addition of photoinitiator was 7.5 lC/cm2 at 20 keV and lines of width 40 nm have been achieved at 30 keV. 2006-02-20 Article PeerReviewed application/pdf http://eprints.utp.edu.my/882/1/Micro_Eng_2006.pdf Robinson, A.P.G and Mohd Zaid, Hasnah (2006) Chemically amplified molecular resists for electron beam lithography. Microelectronic Engineering, 83 . http://eprints.utp.edu.my/882/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
topic QC Physics
spellingShingle QC Physics
Robinson, A.P.G
Mohd Zaid, Hasnah
Chemically amplified molecular resists for electron beam lithography
description Molecular resists, such as fullerene and triphenylene derivatives, use small carbon rich molecules, which give the potential for greater resolution, lower line edge roughness and higher etch durability than traditional polymeric materials. Their main limitation has been low sensitivity to irradiation. Here the chemical amplification of fullerene and triphenylene negative tone molecular resists is demonstrated. The sensitivity of a fullerene resist to 20 keV electrons was improved from 550 to 8 lC/cm2 by addition of an epoxide crosslinker and photoinitiator. Lines of width 25 nm were written using 30 keV electrons. A triphenylene with pendant epoxy groups was also studied. In this case the sensitivity reached on addition of photoinitiator was 7.5 lC/cm2 at 20 keV and lines of width 40 nm have been achieved at 30 keV.
format Article
author Robinson, A.P.G
Mohd Zaid, Hasnah
author_facet Robinson, A.P.G
Mohd Zaid, Hasnah
author_sort Robinson, A.P.G
title Chemically amplified molecular resists for electron beam lithography
title_short Chemically amplified molecular resists for electron beam lithography
title_full Chemically amplified molecular resists for electron beam lithography
title_fullStr Chemically amplified molecular resists for electron beam lithography
title_full_unstemmed Chemically amplified molecular resists for electron beam lithography
title_sort chemically amplified molecular resists for electron beam lithography
publishDate 2006
url http://eprints.utp.edu.my/882/1/Micro_Eng_2006.pdf
http://eprints.utp.edu.my/882/
_version_ 1738655096396316672
score 13.211869

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