Chemical Amplification of a Triphenylene Molecular Electron Beam Resist
Molecular resists, such as triphenylene derivatives, are small carbon rich molecules, and thus give the potential for higher lithographic resolution and etch durability, and lower line width roughness than traditional polymeric compounds. Their main limitation to date has been poor sensitivity. A...
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my.utp.eprints.5022017-01-19T08:27:08Z Chemical Amplification of a Triphenylene Molecular Electron Beam Resist Mohd Zaid, Hasnah QC Physics Molecular resists, such as triphenylene derivatives, are small carbon rich molecules, and thus give the potential for higher lithographic resolution and etch durability, and lower line width roughness than traditional polymeric compounds. Their main limitation to date has been poor sensitivity. A new triphenylene derivative molecular resist, with pendant epoxy groups to aid chemically amplified crosslinking, was synthesized and characterized. The sensitivity of the negative tone, pure triphenylene derivative when exposed to an electron beam with energy 20 keV was ~610–4 Ccm–2, which increased substantially to ~ 1.5 10–5 Ccm–2 after chemical amplification (CA) using a cationic photoinitiator. This was further improved, by the addition of a second triphenylene derivative, to ~710–6 Ccm–2. The chemically amplified resist demonstrated a high etch durability comparable with the novolac resist SAL 601. Patterns with a minimum feature size of ~ 40 nm were realized in the resist with a 30 keV electron beam 2007 Article PeerReviewed application/pdf http://eprints.utp.edu.my/502/2/Triphenylene.pdf Mohd Zaid, Hasnah (2007) Chemical Amplification of a Triphenylene Molecular Electron Beam Resist. Advanced Functional Material . pp. 1-6. http://eprints.utp.edu.my/502/ |
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QC Physics Mohd Zaid, Hasnah Chemical Amplification of a Triphenylene Molecular Electron Beam Resist |
| description |
Molecular resists, such as triphenylene derivatives, are small carbon rich molecules, and thus give the potential for higher lithographic
resolution and etch durability, and lower line width roughness than traditional polymeric compounds. Their main limitation
to date has been poor sensitivity. A new triphenylene derivative molecular resist, with pendant epoxy groups to aid
chemically amplified crosslinking, was synthesized and characterized. The sensitivity of the negative tone, pure triphenylene derivative
when exposed to an electron beam with energy 20 keV was ~610–4 Ccm–2, which increased substantially to
~ 1.5 10–5 Ccm–2 after chemical amplification (CA) using a cationic photoinitiator. This was further improved, by the addition
of a second triphenylene derivative, to ~710–6 Ccm–2. The chemically amplified resist demonstrated a high etch durability
comparable with the novolac resist SAL 601. Patterns with a minimum feature size of ~ 40 nm were realized in the resist with a
30 keV electron beam |
| format |
Article |
| author |
Mohd Zaid, Hasnah |
| author_facet |
Mohd Zaid, Hasnah |
| author_sort |
Mohd Zaid, Hasnah |
| title |
Chemical Amplification of a Triphenylene Molecular Electron Beam Resist |
| title_short |
Chemical Amplification of a Triphenylene Molecular Electron Beam Resist |
| title_full |
Chemical Amplification of a Triphenylene Molecular Electron Beam Resist |
| title_fullStr |
Chemical Amplification of a Triphenylene Molecular Electron Beam Resist |
| title_full_unstemmed |
Chemical Amplification of a Triphenylene Molecular Electron Beam Resist |
| title_sort |
chemical amplification of a triphenylene molecular electron beam resist |
| publishDate |
2007 |
| url |
http://eprints.utp.edu.my/502/2/Triphenylene.pdf http://eprints.utp.edu.my/502/ |
| _version_ |
1738655072253902848 |
| score |
13.211869 |