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Oxide ion conductivity in doped Ga based perovskite type oxide

Oxide ion conductivity of Ga based perovskite type oxides, LnGaO, (Ln = Nd, La) and its related oxide, A,Ga,O, (A = Ba and St) was investigated. Oxide ion transference number is almost I.0 on Sr,Ga,O, or Ba,Ga,O,. However, electrical conductivity of these A,Ga,O, system oxides was lower than log (...

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Main Authors: Ishihara, Tatsumi, Matsuda, Hideaki, Bustam, Mohamad Azmi, Takita, Yusaku
Format: Article
Published: Elsevier B.V. 1996
Subjects:
T Technology (General)
Online Access:http://eprints.utp.edu.my/3799/1/Ishihara_1996_Solid-State-Ionics.pdf
http://eprints.utp.edu.my/3799/
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spelling my.utp.eprints.37992017-03-20T01:57:06Z Oxide ion conductivity in doped Ga based perovskite type oxide Ishihara, Tatsumi Matsuda, Hideaki Bustam, Mohamad Azmi Takita, Yusaku T Technology (General) Oxide ion conductivity of Ga based perovskite type oxides, LnGaO, (Ln = Nd, La) and its related oxide, A,Ga,O, (A = Ba and St) was investigated. Oxide ion transference number is almost I.0 on Sr,Ga,O, or Ba,Ga,O,. However, electrical conductivity of these A,Ga,O, system oxides was lower than log (a/S cm-‘) = - 3 due to the low solubility of the aliovalent cations. On the other hand, doped perovskite type oxide of NdGaO, and LaGaO; exhibited a high electrical conductivity and the transference number of oxide ion was higher than 0.9 in the oxygen partial pressure range from PO2 = 1 to 1o-2’ atm. In particular, Ca and Mg doped NdGaO, exhibited a high oxide ion conductivity in similar with LaGaO,based oxide. Elsevier B.V. 1996 Article PeerReviewed application/pdf http://eprints.utp.edu.my/3799/1/Ishihara_1996_Solid-State-Ionics.pdf Ishihara, Tatsumi and Matsuda, Hideaki and Bustam, Mohamad Azmi and Takita, Yusaku (1996) Oxide ion conductivity in doped Ga based perovskite type oxide. Solid State Ionics , 86-88 . pp. 197-201. http://eprints.utp.edu.my/3799/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
topic T Technology (General)
spellingShingle T Technology (General)
Ishihara, Tatsumi
Matsuda, Hideaki
Bustam, Mohamad Azmi
Takita, Yusaku
Oxide ion conductivity in doped Ga based perovskite type oxide
description Oxide ion conductivity of Ga based perovskite type oxides, LnGaO, (Ln = Nd, La) and its related oxide, A,Ga,O, (A = Ba and St) was investigated. Oxide ion transference number is almost I.0 on Sr,Ga,O, or Ba,Ga,O,. However, electrical conductivity of these A,Ga,O, system oxides was lower than log (a/S cm-‘) = - 3 due to the low solubility of the aliovalent cations. On the other hand, doped perovskite type oxide of NdGaO, and LaGaO; exhibited a high electrical conductivity and the transference number of oxide ion was higher than 0.9 in the oxygen partial pressure range from PO2 = 1 to 1o-2’ atm. In particular, Ca and Mg doped NdGaO, exhibited a high oxide ion conductivity in similar with LaGaO,based oxide.
format Article
author Ishihara, Tatsumi
Matsuda, Hideaki
Bustam, Mohamad Azmi
Takita, Yusaku
author_facet Ishihara, Tatsumi
Matsuda, Hideaki
Bustam, Mohamad Azmi
Takita, Yusaku
author_sort Ishihara, Tatsumi
title Oxide ion conductivity in doped Ga based perovskite type oxide
title_short Oxide ion conductivity in doped Ga based perovskite type oxide
title_full Oxide ion conductivity in doped Ga based perovskite type oxide
title_fullStr Oxide ion conductivity in doped Ga based perovskite type oxide
title_full_unstemmed Oxide ion conductivity in doped Ga based perovskite type oxide
title_sort oxide ion conductivity in doped ga based perovskite type oxide
publisher Elsevier B.V.
publishDate 1996
url http://eprints.utp.edu.my/3799/1/Ishihara_1996_Solid-State-Ionics.pdf
http://eprints.utp.edu.my/3799/
_version_ 1738655295596396544
score 13.211869

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