Cover Image

Correlation of charge neutrality point and ions capture in DNA-graphene field-effect transistor using drift-diffusion model

Guanine nucleobases in DNA (GDNA) has a strong binding affinity towards lead (II) ions. Functionalized with graphene field-effect transistor (GFET), it makes an ideal sensing element for GFET-based sensor. The sensing is typically observed in the transfer characteristics of the GFET. Upon successful...

Full description

Saved in:
Bibliographic Details
Main Authors: Mohd Norhakim, N.N.H.B., Arif Bin Burhanudin, Z.
Format: Conference or Workshop Item
Published: Institute of Electrical and Electronics Engineers Inc. 2019
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078206967&doi=10.1109%2fSENSORSNANO44414.2019.8940096&partnerID=40&md5=257fc45127901e9c6accc06f3a38b6b4
http://eprints.utp.edu.my/23536/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.utp.eprints.23536
record_format eprints
spelling my.utp.eprints.235362021-08-19T07:57:36Z Correlation of charge neutrality point and ions capture in DNA-graphene field-effect transistor using drift-diffusion model Mohd Norhakim, N.N.H.B. Arif Bin Burhanudin, Z. Guanine nucleobases in DNA (GDNA) has a strong binding affinity towards lead (II) ions. Functionalized with graphene field-effect transistor (GFET), it makes an ideal sensing element for GFET-based sensor. The sensing is typically observed in the transfer characteristics of the GFET. Upon successful binding of GDNA with Pb2+, the Charge Neutrality Point (CNP) of the GFET will be right-shifted accordingly. This paper aims to evaluate the total charge density and single-stranded GDNA needed for the CNP shift to take place. This is achieved by simulating the GFET transfer characteristics using drift-diffusion model in MATLAB. The simulation takes into account graphene quantum capacitance, channel capacitance and related charges including the captured Pb2+ ions. It reproduces correctly the published transfer characteristics of GFET. Moreover, it also can estimate the CNP shift, number of single strand DNA needed, and number of ions captured. Knowing such features are essentials in enhancing the sensitivity and limit of detections of the GDNA-GFET sensor. © 2019 IEEE. Institute of Electrical and Electronics Engineers Inc. 2019 Conference or Workshop Item NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078206967&doi=10.1109%2fSENSORSNANO44414.2019.8940096&partnerID=40&md5=257fc45127901e9c6accc06f3a38b6b4 Mohd Norhakim, N.N.H.B. and Arif Bin Burhanudin, Z. (2019) Correlation of charge neutrality point and ions capture in DNA-graphene field-effect transistor using drift-diffusion model. In: UNSPECIFIED. http://eprints.utp.edu.my/23536/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
description Guanine nucleobases in DNA (GDNA) has a strong binding affinity towards lead (II) ions. Functionalized with graphene field-effect transistor (GFET), it makes an ideal sensing element for GFET-based sensor. The sensing is typically observed in the transfer characteristics of the GFET. Upon successful binding of GDNA with Pb2+, the Charge Neutrality Point (CNP) of the GFET will be right-shifted accordingly. This paper aims to evaluate the total charge density and single-stranded GDNA needed for the CNP shift to take place. This is achieved by simulating the GFET transfer characteristics using drift-diffusion model in MATLAB. The simulation takes into account graphene quantum capacitance, channel capacitance and related charges including the captured Pb2+ ions. It reproduces correctly the published transfer characteristics of GFET. Moreover, it also can estimate the CNP shift, number of single strand DNA needed, and number of ions captured. Knowing such features are essentials in enhancing the sensitivity and limit of detections of the GDNA-GFET sensor. © 2019 IEEE.
format Conference or Workshop Item
author Mohd Norhakim, N.N.H.B.
Arif Bin Burhanudin, Z.
spellingShingle Mohd Norhakim, N.N.H.B.
Arif Bin Burhanudin, Z.
Correlation of charge neutrality point and ions capture in DNA-graphene field-effect transistor using drift-diffusion model
author_facet Mohd Norhakim, N.N.H.B.
Arif Bin Burhanudin, Z.
author_sort Mohd Norhakim, N.N.H.B.
title Correlation of charge neutrality point and ions capture in DNA-graphene field-effect transistor using drift-diffusion model
title_short Correlation of charge neutrality point and ions capture in DNA-graphene field-effect transistor using drift-diffusion model
title_full Correlation of charge neutrality point and ions capture in DNA-graphene field-effect transistor using drift-diffusion model
title_fullStr Correlation of charge neutrality point and ions capture in DNA-graphene field-effect transistor using drift-diffusion model
title_full_unstemmed Correlation of charge neutrality point and ions capture in DNA-graphene field-effect transistor using drift-diffusion model
title_sort correlation of charge neutrality point and ions capture in dna-graphene field-effect transistor using drift-diffusion model
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2019
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078206967&doi=10.1109%2fSENSORSNANO44414.2019.8940096&partnerID=40&md5=257fc45127901e9c6accc06f3a38b6b4
http://eprints.utp.edu.my/23536/
_version_ 1738656485970280448
score 13.211869

Similar Items