Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes
In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF)...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| 格式: | Article |
| 出版: |
Elsevier B.V.
2020
|
| 在線閱讀: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088260385&doi=10.1016%2fj.sna.2020.112202&partnerID=40&md5=b47de403ee17ece178370963e4f8e3ae http://eprints.utp.edu.my/23194/ |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| id |
my.utp.eprints.23194 |
|---|---|
| record_format |
eprints |
| spelling |
my.utp.eprints.231942021-08-19T06:09:42Z Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes Aslam, M.Z. Jeoti, V. Karuppanan, S. Pandian, M.S. Ferrer, E.M. Suresh, K. In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element (FE) simulation. The simulation results show that a high velocity and a large effective coupling factor can be simultaneously obtained. Besides, the excellent nearly zero TCF is also achieved. The analysis further shows potential for designing high-frequency SAW devices that are CMOS compatible and temperature stable utilizing the Sezawa wave mode. © 2020 Elsevier B.V. Elsevier B.V. 2020 Article NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088260385&doi=10.1016%2fj.sna.2020.112202&partnerID=40&md5=b47de403ee17ece178370963e4f8e3ae Aslam, M.Z. and Jeoti, V. and Karuppanan, S. and Pandian, M.S. and Ferrer, E.M. and Suresh, K. (2020) Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes. Sensors and Actuators, A: Physical, 313 . http://eprints.utp.edu.my/23194/ |
| institution |
Universiti Teknologi Petronas |
| building |
UTP Resource Centre |
| collection |
Institutional Repository |
| continent |
Asia |
| country |
Malaysia |
| content_provider |
Universiti Teknologi Petronas |
| content_source |
UTP Institutional Repository |
| url_provider |
http://eprints.utp.edu.my/ |
| description |
In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element (FE) simulation. The simulation results show that a high velocity and a large effective coupling factor can be simultaneously obtained. Besides, the excellent nearly zero TCF is also achieved. The analysis further shows potential for designing high-frequency SAW devices that are CMOS compatible and temperature stable utilizing the Sezawa wave mode. © 2020 Elsevier B.V. |
| format |
Article |
| author |
Aslam, M.Z. Jeoti, V. Karuppanan, S. Pandian, M.S. Ferrer, E.M. Suresh, K. |
| spellingShingle |
Aslam, M.Z. Jeoti, V. Karuppanan, S. Pandian, M.S. Ferrer, E.M. Suresh, K. Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes |
| author_facet |
Aslam, M.Z. Jeoti, V. Karuppanan, S. Pandian, M.S. Ferrer, E.M. Suresh, K. |
| author_sort |
Aslam, M.Z. |
| title |
Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes |
| title_short |
Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes |
| title_full |
Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes |
| title_fullStr |
Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes |
| title_full_unstemmed |
Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes |
| title_sort |
surface acoustic wave modes characteristics of cmos compatible sio2/aln/sio2/si multilayer structure with embedded electrodes |
| publisher |
Elsevier B.V. |
| publishDate |
2020 |
| url |
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088260385&doi=10.1016%2fj.sna.2020.112202&partnerID=40&md5=b47de403ee17ece178370963e4f8e3ae http://eprints.utp.edu.my/23194/ |
| _version_ |
1738656437388705792 |
| score |
13.250246 |