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A new gate drive for a single-phase matrix converter

This paper presents the new generation of advanced gate driver circuit based on IR2110 device for a Single-Phase Matrix Converter (SPMC) circuit topology that uses MOSFETs or IGBTs switches. The new generation of gate drive circuit uses less number of components, since a single IR2110 device can dri...

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Main Authors: Baharom, R., Rahman, N.F.A., Hidayat, M.N., Muhammad, K.S., Seroji, M.N., Yahaya, N.Z.
Format: Article
Published: Institute of Advanced Engineering and Science 2020
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081538685&doi=10.11591%2fijpeds.v11.i2.pp823-826&partnerID=40&md5=9a54106a33ba8d2a7b096a5792da5db3
http://eprints.utp.edu.my/23169/
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spelling my.utp.eprints.231692021-08-19T06:10:09Z A new gate drive for a single-phase matrix converter Baharom, R. Rahman, N.F.A. Hidayat, M.N. Muhammad, K.S. Seroji, M.N. Yahaya, N.Z. This paper presents the new generation of advanced gate driver circuit based on IR2110 device for a Single-Phase Matrix Converter (SPMC) circuit topology that uses MOSFETs or IGBTs switches. The new generation of gate drive circuit uses less number of components, since a single IR2110 device can drive two power switches, thus reduce power losses and minimize the complexity of conventional circuit. An additional isolation of the upper and lower sides of IR2110 device features additional protection to the proposed gate drive system. As a result, the proposed gate drive circuit just uses four IR2110 gate drives in order to control eight switches of SPMC circuit, thus, solve the conventional bulky gate drive circuit problem in SPMCs operation. This is in line with the international power electronic technology road-maps to reduce losses, cost, volume, therefore to raise up the power density of power electronics converters. Validation have been done through the experimental test-rig. As a result, such new theoretical enhancements can be used as a novel foundation of future high power density of SPMC circuit topology and in-line with the Fourth Industrial Revolution (IR 4.0) which were characterized mainly by advances in technology. © 2020, Institute of Advanced Engineering and Science. All rights reserved. Institute of Advanced Engineering and Science 2020 Article NonPeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081538685&doi=10.11591%2fijpeds.v11.i2.pp823-826&partnerID=40&md5=9a54106a33ba8d2a7b096a5792da5db3 Baharom, R. and Rahman, N.F.A. and Hidayat, M.N. and Muhammad, K.S. and Seroji, M.N. and Yahaya, N.Z. (2020) A new gate drive for a single-phase matrix converter. International Journal of Power Electronics and Drive Systems, 11 (2). pp. 823-826. http://eprints.utp.edu.my/23169/
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Institutional Repository
url_provider http://eprints.utp.edu.my/
description This paper presents the new generation of advanced gate driver circuit based on IR2110 device for a Single-Phase Matrix Converter (SPMC) circuit topology that uses MOSFETs or IGBTs switches. The new generation of gate drive circuit uses less number of components, since a single IR2110 device can drive two power switches, thus reduce power losses and minimize the complexity of conventional circuit. An additional isolation of the upper and lower sides of IR2110 device features additional protection to the proposed gate drive system. As a result, the proposed gate drive circuit just uses four IR2110 gate drives in order to control eight switches of SPMC circuit, thus, solve the conventional bulky gate drive circuit problem in SPMCs operation. This is in line with the international power electronic technology road-maps to reduce losses, cost, volume, therefore to raise up the power density of power electronics converters. Validation have been done through the experimental test-rig. As a result, such new theoretical enhancements can be used as a novel foundation of future high power density of SPMC circuit topology and in-line with the Fourth Industrial Revolution (IR 4.0) which were characterized mainly by advances in technology. © 2020, Institute of Advanced Engineering and Science. All rights reserved.
format Article
author Baharom, R.
Rahman, N.F.A.
Hidayat, M.N.
Muhammad, K.S.
Seroji, M.N.
Yahaya, N.Z.
spellingShingle Baharom, R.
Rahman, N.F.A.
Hidayat, M.N.
Muhammad, K.S.
Seroji, M.N.
Yahaya, N.Z.
A new gate drive for a single-phase matrix converter
author_facet Baharom, R.
Rahman, N.F.A.
Hidayat, M.N.
Muhammad, K.S.
Seroji, M.N.
Yahaya, N.Z.
author_sort Baharom, R.
title A new gate drive for a single-phase matrix converter
title_short A new gate drive for a single-phase matrix converter
title_full A new gate drive for a single-phase matrix converter
title_fullStr A new gate drive for a single-phase matrix converter
title_full_unstemmed A new gate drive for a single-phase matrix converter
title_sort new gate drive for a single-phase matrix converter
publisher Institute of Advanced Engineering and Science
publishDate 2020
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081538685&doi=10.11591%2fijpeds.v11.i2.pp823-826&partnerID=40&md5=9a54106a33ba8d2a7b096a5792da5db3
http://eprints.utp.edu.my/23169/
_version_ 1738656433904287744
score 13.211869

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