60 GHz microstrip filter in 0.13μm RF CMOS technology
This paper presents the design of a 60 GHz microstrip filter to be incorporated in an LNA circuit in CMOS at millimeter-wave (mmW) frequencies. The proposed filter is designed using 8-metal layers of 0.13μm Silterra RF CMOS technology with ultra top metal (UTM) as the signal line and metal M1 as the...
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Institute of Electrical and Electronics Engineers Inc.
2017
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my.utp.eprints.202492018-04-22T14:47:50Z 60 GHz microstrip filter in 0.13μm RF CMOS technology Harsoori, M.M. Zulkifli, T.Z.A. This paper presents the design of a 60 GHz microstrip filter to be incorporated in an LNA circuit in CMOS at millimeter-wave (mmW) frequencies. The proposed filter is designed using 8-metal layers of 0.13μm Silterra RF CMOS technology with ultra top metal (UTM) as the signal line and metal M1 as the ground plane. The structure was simulated using 3D EM simulation tools, resulting in the insertion loss of 0.00874 dB and input and output return losses of 44.7 and 42.8 dB, respectively at 60 GHz resonant frequency. The filter design is potentially useful as the input and output matching of 50 ω for millimeter-wave (mmW) LNA. © 2016 IEEE. Institute of Electrical and Electronics Engineers Inc. 2017 Article PeerReviewed https://www.scopus.com/inward/record.uri?eid=2-s2.0-85014251067&doi=10.1109%2fSCORED.2016.7810065&partnerID=40&md5=e92dc0485a724757cbbf6a80040299d1 Harsoori, M.M. and Zulkifli, T.Z.A. (2017) 60 GHz microstrip filter in 0.13μm RF CMOS technology. Proceedings - 14th IEEE Student Conference on Research and Development: Advancing Technology for Humanity, SCOReD 2016 . http://eprints.utp.edu.my/20249/ |
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This paper presents the design of a 60 GHz microstrip filter to be incorporated in an LNA circuit in CMOS at millimeter-wave (mmW) frequencies. The proposed filter is designed using 8-metal layers of 0.13μm Silterra RF CMOS technology with ultra top metal (UTM) as the signal line and metal M1 as the ground plane. The structure was simulated using 3D EM simulation tools, resulting in the insertion loss of 0.00874 dB and input and output return losses of 44.7 and 42.8 dB, respectively at 60 GHz resonant frequency. The filter design is potentially useful as the input and output matching of 50 ω for millimeter-wave (mmW) LNA. © 2016 IEEE. |
format |
Article |
author |
Harsoori, M.M. Zulkifli, T.Z.A. |
spellingShingle |
Harsoori, M.M. Zulkifli, T.Z.A. 60 GHz microstrip filter in 0.13μm RF CMOS technology |
author_facet |
Harsoori, M.M. Zulkifli, T.Z.A. |
author_sort |
Harsoori, M.M. |
title |
60 GHz microstrip filter in 0.13μm RF CMOS technology |
title_short |
60 GHz microstrip filter in 0.13μm RF CMOS technology |
title_full |
60 GHz microstrip filter in 0.13μm RF CMOS technology |
title_fullStr |
60 GHz microstrip filter in 0.13μm RF CMOS technology |
title_full_unstemmed |
60 GHz microstrip filter in 0.13μm RF CMOS technology |
title_sort |
60 ghz microstrip filter in 0.13μm rf cmos technology |
publisher |
Institute of Electrical and Electronics Engineers Inc. |
publishDate |
2017 |
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https://www.scopus.com/inward/record.uri?eid=2-s2.0-85014251067&doi=10.1109%2fSCORED.2016.7810065&partnerID=40&md5=e92dc0485a724757cbbf6a80040299d1 http://eprints.utp.edu.my/20249/ |
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13.211869 |