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Dry transfer process of single-layer graphene on multi-layer hexagonal boron nitride for high quality heterostructure

Carrier mobility of the graphene thin film is one of the most crucial factors to achieve superior device performance. Factors that influence the carrier mobility include film crystallinity, layer number, presence of contaminations, and effect of the substrate. In this work, to obtain high-quality gr...

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Main Authors: Kalantari, Alireza, Mostafa, Yusefi, Abd. Rahman, Shaharin Fadzli, Hashim, Abdul Manaf
Format: Conference or Workshop Item
Published: 2022
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/98591/
http://dx.doi.org/10.4028/p-8547xa
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spelling my.utm.985912023-01-17T09:37:14Z http://eprints.utm.my/id/eprint/98591/ Dry transfer process of single-layer graphene on multi-layer hexagonal boron nitride for high quality heterostructure Kalantari, Alireza Mostafa, Yusefi Abd. Rahman, Shaharin Fadzli Hashim, Abdul Manaf TK Electrical engineering. Electronics Nuclear engineering Carrier mobility of the graphene thin film is one of the most crucial factors to achieve superior device performance. Factors that influence the carrier mobility include film crystallinity, layer number, presence of contaminations, and effect of the substrate. In this work, to obtain high-quality graphene film, single-layer graphene film was formed on a hexagonal boron nitride (hBN) thin-film via mechanical exfoliation technique. Mechanical exfoliation of graphite was done on a silicon substrate covered with poly (methyl methacrylate)/ poly (acrylic acid). Three adjacent thin films, each having approximately 20-30 µm length and 3-4 µm width making an average area of 87.5 µm2 for each film. From the measured Raman spectrum, the 2D-to-G peak intensity ratio was 1.7, confirming that exfoliated graphene is a single layer. The absence of the D peak indicates minimum crystal defects in the film. The graphene layers were subsequently dry-transferred onto mechanically exfoliated multi-layer hBN thin film. The area of the exfoliated hBN is around 6,000 µm2 . The quality of the transfer process was evaluated through inspection under an optical microscope. All three single-layer graphene thin films were successfully placed exactly on the hBN without any presence of bubble and wrinkle. The process was described very detailed. The formed single-layer graphene on hBN layer is expected to have superior electrical characteristics and can be utilized for the fabrication of high-performance nano device. 2022 Conference or Workshop Item PeerReviewed Kalantari, Alireza and Mostafa, Yusefi and Abd. Rahman, Shaharin Fadzli and Hashim, Abdul Manaf (2022) Dry transfer process of single-layer graphene on multi-layer hexagonal boron nitride for high quality heterostructure. In: 2nd Nanotechnology Malaysia Biennial Symposium, NanoSym 2021, 11 - 13 October 2021, Virtual, Online. http://dx.doi.org/10.4028/p-8547xa
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Kalantari, Alireza
Mostafa, Yusefi
Abd. Rahman, Shaharin Fadzli
Hashim, Abdul Manaf
Dry transfer process of single-layer graphene on multi-layer hexagonal boron nitride for high quality heterostructure
description Carrier mobility of the graphene thin film is one of the most crucial factors to achieve superior device performance. Factors that influence the carrier mobility include film crystallinity, layer number, presence of contaminations, and effect of the substrate. In this work, to obtain high-quality graphene film, single-layer graphene film was formed on a hexagonal boron nitride (hBN) thin-film via mechanical exfoliation technique. Mechanical exfoliation of graphite was done on a silicon substrate covered with poly (methyl methacrylate)/ poly (acrylic acid). Three adjacent thin films, each having approximately 20-30 µm length and 3-4 µm width making an average area of 87.5 µm2 for each film. From the measured Raman spectrum, the 2D-to-G peak intensity ratio was 1.7, confirming that exfoliated graphene is a single layer. The absence of the D peak indicates minimum crystal defects in the film. The graphene layers were subsequently dry-transferred onto mechanically exfoliated multi-layer hBN thin film. The area of the exfoliated hBN is around 6,000 µm2 . The quality of the transfer process was evaluated through inspection under an optical microscope. All three single-layer graphene thin films were successfully placed exactly on the hBN without any presence of bubble and wrinkle. The process was described very detailed. The formed single-layer graphene on hBN layer is expected to have superior electrical characteristics and can be utilized for the fabrication of high-performance nano device.
format Conference or Workshop Item
author Kalantari, Alireza
Mostafa, Yusefi
Abd. Rahman, Shaharin Fadzli
Hashim, Abdul Manaf
author_facet Kalantari, Alireza
Mostafa, Yusefi
Abd. Rahman, Shaharin Fadzli
Hashim, Abdul Manaf
author_sort Kalantari, Alireza
title Dry transfer process of single-layer graphene on multi-layer hexagonal boron nitride for high quality heterostructure
title_short Dry transfer process of single-layer graphene on multi-layer hexagonal boron nitride for high quality heterostructure
title_full Dry transfer process of single-layer graphene on multi-layer hexagonal boron nitride for high quality heterostructure
title_fullStr Dry transfer process of single-layer graphene on multi-layer hexagonal boron nitride for high quality heterostructure
title_full_unstemmed Dry transfer process of single-layer graphene on multi-layer hexagonal boron nitride for high quality heterostructure
title_sort dry transfer process of single-layer graphene on multi-layer hexagonal boron nitride for high quality heterostructure
publishDate 2022
url http://eprints.utm.my/id/eprint/98591/
http://dx.doi.org/10.4028/p-8547xa
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score 13.211869

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