Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium
Ge is a promising candidate to replace Si since the Si downscaling is approaching its limit. Further optimization in ion implantation process parameters is required in order to fabricate highly activated n-type junction in Ge. The co-implantation technique is one of interest due to the enhanced acti...
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| 主要な著者: | , , , , , , , |
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| フォーマット: | Conference or Workshop Item |
| 出版事項: |
2017
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| 主題: | |
| オンライン･アクセス: | http://eprints.utm.my/id/eprint/97208/ http://dx.doi.org/10.1109/IEACON.2016.8067411 |
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