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Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium

Ge is a promising candidate to replace Si since the Si downscaling is approaching its limit. Further optimization in ion implantation process parameters is required in order to fabricate highly activated n-type junction in Ge. The co-implantation technique is one of interest due to the enhanced acti...

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Main Authors:	Mohamad Rashid, Nur Nadhirah, Abdul Aziz, Umar, Aid, Siti Rahmah, Centeno, Anthony, Matsumoto, Satoru, Xie, Fang, Suwa, Akira, Ikenoue, Hiroshi
Format:	Conference or Workshop Item
Published:	2017
Subjects:	T Technology (General)
Online Access:	http://eprints.utm.my/id/eprint/97208/ http://dx.doi.org/10.1109/IEACON.2016.8067411
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id	my.utm.97208
record_format	eprints
spelling	my.utm.972082022-09-23T03:54:05Z http://eprints.utm.my/id/eprint/97208/ Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium Mohamad Rashid, Nur Nadhirah Abdul Aziz, Umar Aid, Siti Rahmah Centeno, Anthony Matsumoto, Satoru Xie, Fang Suwa, Akira Ikenoue, Hiroshi T Technology (General) Ge is a promising candidate to replace Si since the Si downscaling is approaching its limit. Further optimization in ion implantation process parameters is required in order to fabricate highly activated n-type junction in Ge. The co-implantation technique is one of interest due to the enhanced active carrier concentration attributed to the stress associated with atomic size of the non-dopant. In this work, phosphorus (P) and tin (Sn) have been selected as dopant and non-dopant atoms for the co-implantation process. Theoretical analysis on dopant distribution in the substrate was performed using TRIM software. The calculation predicted a maximum concentration of n-type dopant up to 1E20 cm-3. Fabricated samples were then experimentally analyzed using SIMS for depth profiling. A difference of less than one order of magnitude was observed from the comparison of both results. The difference between TRIM and SIMS is attributed to the sputtering effect and the rise of temperature during co-implantation process. 2017 Conference or Workshop Item PeerReviewed Mohamad Rashid, Nur Nadhirah and Abdul Aziz, Umar and Aid, Siti Rahmah and Centeno, Anthony and Matsumoto, Satoru and Xie, Fang and Suwa, Akira and Ikenoue, Hiroshi (2017) Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium. In: 2016 IEEE Industrial Electronics and Applications Conference, IEACon 2016, 20 - 22 November 2016, Kota Kinabalu, Sabah. http://dx.doi.org/10.1109/IEACON.2016.8067411
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
topic	T Technology (General)
spellingShingle	T Technology (General) Mohamad Rashid, Nur Nadhirah Abdul Aziz, Umar Aid, Siti Rahmah Centeno, Anthony Matsumoto, Satoru Xie, Fang Suwa, Akira Ikenoue, Hiroshi Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium
description	Ge is a promising candidate to replace Si since the Si downscaling is approaching its limit. Further optimization in ion implantation process parameters is required in order to fabricate highly activated n-type junction in Ge. The co-implantation technique is one of interest due to the enhanced active carrier concentration attributed to the stress associated with atomic size of the non-dopant. In this work, phosphorus (P) and tin (Sn) have been selected as dopant and non-dopant atoms for the co-implantation process. Theoretical analysis on dopant distribution in the substrate was performed using TRIM software. The calculation predicted a maximum concentration of n-type dopant up to 1E20 cm-3. Fabricated samples were then experimentally analyzed using SIMS for depth profiling. A difference of less than one order of magnitude was observed from the comparison of both results. The difference between TRIM and SIMS is attributed to the sputtering effect and the rise of temperature during co-implantation process.
format	Conference or Workshop Item
author	Mohamad Rashid, Nur Nadhirah Abdul Aziz, Umar Aid, Siti Rahmah Centeno, Anthony Matsumoto, Satoru Xie, Fang Suwa, Akira Ikenoue, Hiroshi
author_facet	Mohamad Rashid, Nur Nadhirah Abdul Aziz, Umar Aid, Siti Rahmah Centeno, Anthony Matsumoto, Satoru Xie, Fang Suwa, Akira Ikenoue, Hiroshi
author_sort	Mohamad Rashid, Nur Nadhirah
title	Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium
title_short	Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium
title_full	Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium
title_fullStr	Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium
title_full_unstemmed	Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium
title_sort	comparison of theoretical and experimental analysis of p and sn co-implantation in germanium
publishDate	2017
url	http://eprints.utm.my/id/eprint/97208/ http://dx.doi.org/10.1109/IEACON.2016.8067411
_version_	1745562351787048960
score	13.211869

Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium

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