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Crystallized InBiS3 thin films with enhanced optoelectronic properties

In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth sulphide thin films, and the synergetic effects of co-evaporation of two sources (indium granules and Bi2S3 powders) were investigated using different characterization techniques. X-ray diffraction (XRD...

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Main Authors:	Ali, N., Hussain, Arshad, Ahmed, R., Omar, M. Firdaus, Sultan, M., Yong, Qing Fu
Format:	Article
Published:	Elsevier B.V. 2018
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/97076/ http://dx.doi.org/10.1016/j.apsusc.2017.11.273
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id	my.utm.97076
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spelling	my.utm.970762022-09-12T07:50:20Z http://eprints.utm.my/id/eprint/97076/ Crystallized InBiS3 thin films with enhanced optoelectronic properties Ali, N. Hussain, Arshad Ahmed, R. Omar, M. Firdaus Sultan, M. Yong, Qing Fu QC Physics In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth sulphide thin films, and the synergetic effects of co-evaporation of two sources (indium granules and Bi2S3 powders) were investigated using different characterization techniques. X-ray diffraction (XRD) analysis confirmed the crystalline orthorhombic structure for the post-annealed samples. Surface roughness and crystal size of the obtained film samples were increased with increasing annealing temperatures. Analysis using X-ray photoelectron spectroscopy showed the formation of the InBiS3 structure for the obtained films, which is also confirmed by the XRD results. The optical absorption coefficient value of the annealed samples was found to be in the order of 105 cm−1 in the visible region of the solar spectrum. The optical band gap energy and electrical resistivity of the fabricated samples were observed to decrease (from 2.2 to 1.3 eV, and from 0.3 to 0.01 Ω–cm, respectively) with increasing annealing temperatures (from 200 to 350 °C), indicating the suitability of the prepared InBiS3 thin films for solar cell applications. Elsevier B.V. 2018-04-01 Article PeerReviewed Ali, N. and Hussain, Arshad and Ahmed, R. and Omar, M. Firdaus and Sultan, M. and Yong, Qing Fu (2018) Crystallized InBiS3 thin films with enhanced optoelectronic properties. Applied Surface Science, 436 (NA). pp. 293-301. ISSN 0169-4332 http://dx.doi.org/10.1016/j.apsusc.2017.11.273 DOI:10.1016/j.apsusc.2017.11.273
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
topic	QC Physics
spellingShingle	QC Physics Ali, N. Hussain, Arshad Ahmed, R. Omar, M. Firdaus Sultan, M. Yong, Qing Fu Crystallized InBiS3 thin films with enhanced optoelectronic properties
description	In this paper, a one-step thermal evaporation approach was used for fabrication of indium bismuth sulphide thin films, and the synergetic effects of co-evaporation of two sources (indium granules and Bi2S3 powders) were investigated using different characterization techniques. X-ray diffraction (XRD) analysis confirmed the crystalline orthorhombic structure for the post-annealed samples. Surface roughness and crystal size of the obtained film samples were increased with increasing annealing temperatures. Analysis using X-ray photoelectron spectroscopy showed the formation of the InBiS3 structure for the obtained films, which is also confirmed by the XRD results. The optical absorption coefficient value of the annealed samples was found to be in the order of 105 cm−1 in the visible region of the solar spectrum. The optical band gap energy and electrical resistivity of the fabricated samples were observed to decrease (from 2.2 to 1.3 eV, and from 0.3 to 0.01 Ω–cm, respectively) with increasing annealing temperatures (from 200 to 350 °C), indicating the suitability of the prepared InBiS3 thin films for solar cell applications.
format	Article
author	Ali, N. Hussain, Arshad Ahmed, R. Omar, M. Firdaus Sultan, M. Yong, Qing Fu
author_facet	Ali, N. Hussain, Arshad Ahmed, R. Omar, M. Firdaus Sultan, M. Yong, Qing Fu
author_sort	Ali, N.
title	Crystallized InBiS3 thin films with enhanced optoelectronic properties
title_short	Crystallized InBiS3 thin films with enhanced optoelectronic properties
title_full	Crystallized InBiS3 thin films with enhanced optoelectronic properties
title_fullStr	Crystallized InBiS3 thin films with enhanced optoelectronic properties
title_full_unstemmed	Crystallized InBiS3 thin films with enhanced optoelectronic properties
title_sort	crystallized inbis3 thin films with enhanced optoelectronic properties
publisher	Elsevier B.V.
publishDate	2018
url	http://eprints.utm.my/id/eprint/97076/ http://dx.doi.org/10.1016/j.apsusc.2017.11.273
_version_	1744353710597734400
score	13.211869

Crystallized InBiS3 thin films with enhanced optoelectronic properties

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