Performance evaluation of finfet silicide based contact through electrical simulation
Continues scaling of device dimension allows the complex integration of increasing number of transistors in a single chip possible. As the semiconductor industry move according to Moore’s law, the scaling down of field effect transistor (FET) has reached less than 10 nm. The conventional planar FET...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2021
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/96835/1/AdliaAiniMSKE2021.pdf.pdf http://eprints.utm.my/id/eprint/96835/ http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:142171 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|