Device performance of silicene nanoribbon field-effect transistor under ballistic transport
Ballistic device performance of monolayer silicene nanoribbon (SiNR) field-effect transistors (FETs) is investigated in this paper. The electronic band structure of SiNR is calculated within the nearest neighbour tight-binding approximation. The top of the barrier ballistic transistor model is emplo...
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| Main Authors: | , , , , , , |
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| Format: | Conference or Workshop Item |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/94134/ http://dx.doi.org/10.1109/ICSE49846.2020.9166895 |
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