MARC表示: Resistivity measurement of ZnO:AI films for solar cell

Resistivity measurement of ZnO:AI films for solar cell

Aluminium doped Zinc Oxide films were deposited on glass slide by RF magnetron sputtering using a ZnO target mixed with A120J. All the films were growth in room temperature without intentional heating. The resistivity of the ZnO:AI films were measured using van der Pauw method in terms of the prepar...

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主要な著者:	Tan, Hang Khume, Md. Yusuf, Mohd. Nor, Ismail, Bakar, Wahab, Yussof, Othaman, Zulkafli
フォーマット:	Conference or Workshop Item
言語:	English
出版事項:	2006
主題:	QC Physics
オンライン･アクセス:	http://eprints.utm.my/id/eprint/9302/1/TanHangKhume2006_ResistivityMeasurementofZnO.pdf http://eprints.utm.my/id/eprint/9302/
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id	my.utm.9302
record_format	eprints
spelling	my.utm.93022010-11-11T07:15:14Z http://eprints.utm.my/id/eprint/9302/ Resistivity measurement of ZnO:AI films for solar cell Tan, Hang Khume Md. Yusuf, Mohd. Nor Ismail, Bakar Wahab, Yussof Othaman, Zulkafli QC Physics Aluminium doped Zinc Oxide films were deposited on glass slide by RF magnetron sputtering using a ZnO target mixed with A120J. All the films were growth in room temperature without intentional heating. The resistivity of the ZnO:AI films were measured using van der Pauw method in terms of the preparation conditions such as RF power, working pressure, deposition time, O2 content in sputtering gas and target-substrate distance. Resistivity of the deposited films shows the following behaviours: decreases with the increasing RF power and film thickness while increase with increasing target substrate distance, and O2 content in sputtering gas. Resistivity for films prepared in different working pressure decreases with the Argon pressure but increased after the optimal pressure of 45mTorr. 2006-06 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/9302/1/TanHangKhume2006_ResistivityMeasurementofZnO.pdf Tan, Hang Khume and Md. Yusuf, Mohd. Nor and Ismail, Bakar and Wahab, Yussof and Othaman, Zulkafli (2006) Resistivity measurement of ZnO:AI films for solar cell. In: Proceedings of Annual Fundamental Science Seminar 2006 (AFSS 2006), 6th - 7th June 2006, Universiti Teknologi Malaysia, Skudai, Malaysia.
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
language	English
topic	QC Physics
spellingShingle	QC Physics Tan, Hang Khume Md. Yusuf, Mohd. Nor Ismail, Bakar Wahab, Yussof Othaman, Zulkafli Resistivity measurement of ZnO:AI films for solar cell
description	Aluminium doped Zinc Oxide films were deposited on glass slide by RF magnetron sputtering using a ZnO target mixed with A120J. All the films were growth in room temperature without intentional heating. The resistivity of the ZnO:AI films were measured using van der Pauw method in terms of the preparation conditions such as RF power, working pressure, deposition time, O2 content in sputtering gas and target-substrate distance. Resistivity of the deposited films shows the following behaviours: decreases with the increasing RF power and film thickness while increase with increasing target substrate distance, and O2 content in sputtering gas. Resistivity for films prepared in different working pressure decreases with the Argon pressure but increased after the optimal pressure of 45mTorr.
format	Conference or Workshop Item
author	Tan, Hang Khume Md. Yusuf, Mohd. Nor Ismail, Bakar Wahab, Yussof Othaman, Zulkafli
author_facet	Tan, Hang Khume Md. Yusuf, Mohd. Nor Ismail, Bakar Wahab, Yussof Othaman, Zulkafli
author_sort	Tan, Hang Khume
title	Resistivity measurement of ZnO:AI films for solar cell
title_short	Resistivity measurement of ZnO:AI films for solar cell
title_full	Resistivity measurement of ZnO:AI films for solar cell
title_fullStr	Resistivity measurement of ZnO:AI films for solar cell
title_full_unstemmed	Resistivity measurement of ZnO:AI films for solar cell
title_sort	resistivity measurement of zno:ai films for solar cell
publishDate	2006
url	http://eprints.utm.my/id/eprint/9302/1/TanHangKhume2006_ResistivityMeasurementofZnO.pdf http://eprints.utm.my/id/eprint/9302/
_version_	1643645142379266048
score	13.251813

Resistivity measurement of ZnO:AI films for solar cell

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