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Humidity effect on electrical properties of graphene oxide back-to-back schottky diode

A Schottky diode-based sensor is a promising structure for high sensitive and low power sensor. This paper investigates a device called back-to-back Schottky diode (BBSD) for humidity sensing operation. The BBSD provides simpler device configuration that can be fabricated using less complicated proc...

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Main Authors: Rahman, S. F. A., Salleh, N. A., Abidin, M. S. Z., Nawabjan, A.
Format: Article
Language:English
Published: Universitas Ahmad Dahlan 2019
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/89649/1/ShaharinFadzliRahman2019_HumidityEffectonElectricalProperties.pdf
http://eprints.utm.my/id/eprint/89649/
https://dx.doi.org/10.12928/telkomnika.v17i5.12800
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spelling my.utm.896492021-02-22T01:44:33Z http://eprints.utm.my/id/eprint/89649/ Humidity effect on electrical properties of graphene oxide back-to-back schottky diode Rahman, S. F. A. Salleh, N. A. Abidin, M. S. Z. Nawabjan, A. TK Electrical engineering. Electronics Nuclear engineering A Schottky diode-based sensor is a promising structure for high sensitive and low power sensor. This paper investigates a device called back-to-back Schottky diode (BBSD) for humidity sensing operation. The BBSD provides simpler device configuration that can be fabricated using less complicated process. The current-voltage characteristic of the fabricated BBSD was measured at different relative humidity. From the obtained characteristics, series resistance, barrier height and ideality factor was analyzed. The device current increased at higher humidity level. The current increase could be associated to the decrease in series resistance, barrier height and ideality factor. When humidity decreased from 11% to 97%, the barrier height showed reduction of 0.1 eV. The barrier height reduction was explained by considering electric field-induced reduction of graphene oxide. The observed result confirmed the device feasibility as promising simple and low cost humidity sensor. Universitas Ahmad Dahlan 2019 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/89649/1/ShaharinFadzliRahman2019_HumidityEffectonElectricalProperties.pdf Rahman, S. F. A. and Salleh, N. A. and Abidin, M. S. Z. and Nawabjan, A. (2019) Humidity effect on electrical properties of graphene oxide back-to-back schottky diode. Telkomnika (Telecommunication Computing Electronics and Control), 17 (5). pp. 2427-2433. ISSN 1693-6930 https://dx.doi.org/10.12928/telkomnika.v17i5.12800 DOI:10.12928/telkomnika.v17i5.12800
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Rahman, S. F. A.
Salleh, N. A.
Abidin, M. S. Z.
Nawabjan, A.
Humidity effect on electrical properties of graphene oxide back-to-back schottky diode
description A Schottky diode-based sensor is a promising structure for high sensitive and low power sensor. This paper investigates a device called back-to-back Schottky diode (BBSD) for humidity sensing operation. The BBSD provides simpler device configuration that can be fabricated using less complicated process. The current-voltage characteristic of the fabricated BBSD was measured at different relative humidity. From the obtained characteristics, series resistance, barrier height and ideality factor was analyzed. The device current increased at higher humidity level. The current increase could be associated to the decrease in series resistance, barrier height and ideality factor. When humidity decreased from 11% to 97%, the barrier height showed reduction of 0.1 eV. The barrier height reduction was explained by considering electric field-induced reduction of graphene oxide. The observed result confirmed the device feasibility as promising simple and low cost humidity sensor.
format Article
author Rahman, S. F. A.
Salleh, N. A.
Abidin, M. S. Z.
Nawabjan, A.
author_facet Rahman, S. F. A.
Salleh, N. A.
Abidin, M. S. Z.
Nawabjan, A.
author_sort Rahman, S. F. A.
title Humidity effect on electrical properties of graphene oxide back-to-back schottky diode
title_short Humidity effect on electrical properties of graphene oxide back-to-back schottky diode
title_full Humidity effect on electrical properties of graphene oxide back-to-back schottky diode
title_fullStr Humidity effect on electrical properties of graphene oxide back-to-back schottky diode
title_full_unstemmed Humidity effect on electrical properties of graphene oxide back-to-back schottky diode
title_sort humidity effect on electrical properties of graphene oxide back-to-back schottky diode
publisher Universitas Ahmad Dahlan
publishDate 2019
url http://eprints.utm.my/id/eprint/89649/1/ShaharinFadzliRahman2019_HumidityEffectonElectricalProperties.pdf
http://eprints.utm.my/id/eprint/89649/
https://dx.doi.org/10.12928/telkomnika.v17i5.12800
_version_ 1692991806892933120
score 13.211869

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