Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition
This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth o...
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2019
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| Online Access: | http://eprints.utm.my/id/eprint/89543/1/MuhammadFirdausOmar2019_Solid-StateLimitedNucleationofNiSiSiC.pdf http://eprints.utm.my/id/eprint/89543/ http://dx.doi.org/10.3390/ma12040674 |
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my.utm.895432021-02-22T01:47:52Z http://eprints.utm.my/id/eprint/89543/ Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition Alizadeh, Mahdi Hamzan, Najwa Ooi, Poh Choon Omar, Muhammad Firdaus Dee, Chang Fu Goh, Boon Tong QC Physics This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices. MDPI AG 2019-02 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/89543/1/MuhammadFirdausOmar2019_Solid-StateLimitedNucleationofNiSiSiC.pdf Alizadeh, Mahdi and Hamzan, Najwa and Ooi, Poh Choon and Omar, Muhammad Firdaus and Dee, Chang Fu and Goh, Boon Tong (2019) Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition. Materials, 12 (4). p. 674. ISSN 1996-1944 http://dx.doi.org/10.3390/ma12040674 |
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QC Physics Alizadeh, Mahdi Hamzan, Najwa Ooi, Poh Choon Omar, Muhammad Firdaus Dee, Chang Fu Goh, Boon Tong Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition |
| description |
This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices. |
| format |
Article |
| author |
Alizadeh, Mahdi Hamzan, Najwa Ooi, Poh Choon Omar, Muhammad Firdaus Dee, Chang Fu Goh, Boon Tong |
| author_facet |
Alizadeh, Mahdi Hamzan, Najwa Ooi, Poh Choon Omar, Muhammad Firdaus Dee, Chang Fu Goh, Boon Tong |
| author_sort |
Alizadeh, Mahdi |
| title |
Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition |
| title_short |
Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition |
| title_full |
Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition |
| title_fullStr |
Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition |
| title_full_unstemmed |
Solid-state limited nucleation of NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition |
| title_sort |
solid-state limited nucleation of nisi/sic core-shell nanowires by hot-wire chemical vapor deposition |
| publisher |
MDPI AG |
| publishDate |
2019 |
| url |
http://eprints.utm.my/id/eprint/89543/1/MuhammadFirdausOmar2019_Solid-StateLimitedNucleationofNiSiSiC.pdf http://eprints.utm.my/id/eprint/89543/ http://dx.doi.org/10.3390/ma12040674 |
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1692991795054510080 |
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13.211869 |