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Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell

Solar cell fabricated by reduced graphene oxide (rGO)/textured silicon (T-Si) structure is feasible due to the capability to form a continuous film of graphene oxide (GO) on Si surface by direct drop-casting or spin coating. In this article, we have fabricated a uniform array of Si inverted pyramida...

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Main Authors: Abdullah, Mohd. Faizol, Hashim, Abdul Manaf
Format: Article
Published: Elsevier Ltd 2019
Subjects:
TA Engineering (General). Civil engineering (General)
Online Access:http://eprints.utm.my/id/eprint/89169/
http://dx.doi.org/10.1016/j.mssp.2019.02.033
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spelling my.utm.891692021-01-26T08:48:15Z http://eprints.utm.my/id/eprint/89169/ Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell Abdullah, Mohd. Faizol Hashim, Abdul Manaf TA Engineering (General). Civil engineering (General) Solar cell fabricated by reduced graphene oxide (rGO)/textured silicon (T-Si) structure is feasible due to the capability to form a continuous film of graphene oxide (GO) on Si surface by direct drop-casting or spin coating. In this article, we have fabricated a uniform array of Si inverted pyramidal microstructures by anisotropic etching using a mixture of tetramethyl-ammonium hydroxide and isopropyl alcohol. Low average reflectance of 10.4% is obtained by T-Si structure as compared to that of 53.5% obtained by flat Si (F-Si) structure in UV–visible range. As a result, the front surface area of solar cell has been increased up to 43.2%. The dispersion of GO on Si surface textured with inverted pyramidal microstructures is performed by direct drop-casting of GO droplet or a combination of spin-coating and drop-casting on. The reduction of GO to form rGO is achieved by annealing in N 2 at 400 °C. Direct drop-casting of GO droplet on T-Si results to the formation of suspended GO film, covering only the top of Si inverted pyramidal array. Due to the minimum contact area of rGO and T-Si after the reduction, higher diode ideality factor, η = 4.02 is obtained as compared to the reference rGO/F-Si diode with η = 3.99. A combination of spin-coating and drop-casting of GO droplet on T-Si helps in filling the GO sheets into the pyramidal structures, thus creating a large contact area with sidewalls of Si inverted pyramidal structures. As a result, the η value has been significantly reduced to 3.50. The power conversion efficiency also shows an increment due to the improvement of both short circuit current (J sc ) and open circuit voltage (V oc ). J sc and V oc have been increased from 0.010 mA/cm 2 up to 0.081 mA/cm 2 , and from 96 mV up to 304 mV, respectively. Hence, the power conversion efficiency has been improved in several orders due to the improvement in both J sc and V oc , which is from 2.0 × 10 −4 % up to 5.2 × 10 −3 %. Elsevier Ltd 2019-06-15 Article PeerReviewed Abdullah, Mohd. Faizol and Hashim, Abdul Manaf (2019) Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell. Materials Science in Semiconductor Processing, 96 . pp. 137-144. ISSN 1369-8001 http://dx.doi.org/10.1016/j.mssp.2019.02.033 DOI:10.1016/j.mssp.2019.02.033
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TA Engineering (General). Civil engineering (General)
spellingShingle TA Engineering (General). Civil engineering (General)
Abdullah, Mohd. Faizol
Hashim, Abdul Manaf
Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell
description Solar cell fabricated by reduced graphene oxide (rGO)/textured silicon (T-Si) structure is feasible due to the capability to form a continuous film of graphene oxide (GO) on Si surface by direct drop-casting or spin coating. In this article, we have fabricated a uniform array of Si inverted pyramidal microstructures by anisotropic etching using a mixture of tetramethyl-ammonium hydroxide and isopropyl alcohol. Low average reflectance of 10.4% is obtained by T-Si structure as compared to that of 53.5% obtained by flat Si (F-Si) structure in UV–visible range. As a result, the front surface area of solar cell has been increased up to 43.2%. The dispersion of GO on Si surface textured with inverted pyramidal microstructures is performed by direct drop-casting of GO droplet or a combination of spin-coating and drop-casting on. The reduction of GO to form rGO is achieved by annealing in N 2 at 400 °C. Direct drop-casting of GO droplet on T-Si results to the formation of suspended GO film, covering only the top of Si inverted pyramidal array. Due to the minimum contact area of rGO and T-Si after the reduction, higher diode ideality factor, η = 4.02 is obtained as compared to the reference rGO/F-Si diode with η = 3.99. A combination of spin-coating and drop-casting of GO droplet on T-Si helps in filling the GO sheets into the pyramidal structures, thus creating a large contact area with sidewalls of Si inverted pyramidal structures. As a result, the η value has been significantly reduced to 3.50. The power conversion efficiency also shows an increment due to the improvement of both short circuit current (J sc ) and open circuit voltage (V oc ). J sc and V oc have been increased from 0.010 mA/cm 2 up to 0.081 mA/cm 2 , and from 96 mV up to 304 mV, respectively. Hence, the power conversion efficiency has been improved in several orders due to the improvement in both J sc and V oc , which is from 2.0 × 10 −4 % up to 5.2 × 10 −3 %.
format Article
author Abdullah, Mohd. Faizol
Hashim, Abdul Manaf
author_facet Abdullah, Mohd. Faizol
Hashim, Abdul Manaf
author_sort Abdullah, Mohd. Faizol
title Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell
title_short Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell
title_full Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell
title_fullStr Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell
title_full_unstemmed Improved coverage of rGO film on Si inverted pyramidal microstructures for enhancing the photovoltaic of rGO/Si heterojunction solar cell
title_sort improved coverage of rgo film on si inverted pyramidal microstructures for enhancing the photovoltaic of rgo/si heterojunction solar cell
publisher Elsevier Ltd
publishDate 2019
url http://eprints.utm.my/id/eprint/89169/
http://dx.doi.org/10.1016/j.mssp.2019.02.033
_version_ 1690370980778606592
score 13.211869

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