Thermal oxidation improvement in semiconductor wafer fabrication
Thermal oxidation is a process done to grow a layer of oxide on the surface of a silicon wafer at elevated temperatures to form silicon dioxide. Usually, it en-counters instability in oxide growth and results in variation in the oxide thickness formed. This leads to downtime of furnace and wafer scr...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Published: |
Institute of Advanced Engineering and Science
2019
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/88916/ http://www.dx.doi.org/10.11591/ijpeds.v10.i3.1141-1147 |
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