Reliability of graphene as charge storage layer in floating gate flash memory
This study aims to investigate the memory performances of graphene as a charge storage layer in the floating gate with difference doping concentration of n-channel and p-channel substrates using Silvaco ATLAS TCAD Tools. The simulation work has been done to determine the performance of flash memory...
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| Main Authors: | , , , , , , |
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| Format: | Article |
| Published: |
Institute of Advanced Engineering and Science
2019
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/88863/ http://www.dx.doi.org/10.11591/ijeei.v7i2.1170 |
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