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Switching dynamics and conductance quantization of aloe polysaccharides based device

The switching behaviors of polysaccharides-based resistive random access memories change substantially depending on the electrical inputs. Here, the switching dynamics of the device are presented by varying the applied current compliance (CC) and voltage sweeping rate (ν). The results show that the...

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Main Authors: Lim, Z. X., Tayeb, I. A., A. Hamid, Z. A., Ain, M. F., Hashim, A. M., Abdullah, J. M., Zhao, F., Cheong, K. Y.
Format: Article
Published: Institute of Electrical and Electronics Engineers Inc. 2019
Subjects:
TA Engineering (General). Civil engineering (General)
Online Access:http://eprints.utm.my/id/eprint/87877/
http://dx.doi.org/10.1109/TED.2019.2915106
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spelling my.utm.878772020-11-30T13:29:03Z http://eprints.utm.my/id/eprint/87877/ Switching dynamics and conductance quantization of aloe polysaccharides based device Lim, Z. X. Tayeb, I. A. A. Hamid, Z. A. Ain, M. F. Hashim, A. M. Abdullah, J. M. Zhao, F. Cheong, K. Y. TA Engineering (General). Civil engineering (General) The switching behaviors of polysaccharides-based resistive random access memories change substantially depending on the electrical inputs. Here, the switching dynamics of the device are presented by varying the applied current compliance (CC) and voltage sweeping rate (ν). The results show that the device resistance in the low-resistance state (RLRS) can be modulated over five orders of magnitude by varying (CC) and ν in the typical current-voltage measurements. The (RLRS) modulation is attributed to the variable tunneling gap between the filament tip and the top electrode (TE). Conductance quantization is observed once a single-atomic contact with resistance ≤12.9kΩ is formed. Depending on the TEs, both integer and half-integer multiples of quantization levels are being observed, demonstrating its potential for multilevel data storage. In addition, the results unveil the stochastic strengthening and rupturing of the filament as modulated by periodic voltage pulses, thus enabling the device to operate in both volatile and nonvolatile modes. The device offers excellent switching dynamics for preliminary emulation of synapselike learning and forgetting behaviors in neural junctions for next-generation neuromorphic computing systems. Institute of Electrical and Electronics Engineers Inc. 2019-07 Article PeerReviewed Lim, Z. X. and Tayeb, I. A. and A. Hamid, Z. A. and Ain, M. F. and Hashim, A. M. and Abdullah, J. M. and Zhao, F. and Cheong, K. Y. (2019) Switching dynamics and conductance quantization of aloe polysaccharides based device. IEEE Transactions on Electron Devices, 66 (7). pp. 3110-3117. ISSN 0018-9383 http://dx.doi.org/10.1109/TED.2019.2915106 DOI:10.1109/TED.2019.2915106
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TA Engineering (General). Civil engineering (General)
spellingShingle TA Engineering (General). Civil engineering (General)
Lim, Z. X.
Tayeb, I. A.
A. Hamid, Z. A.
Ain, M. F.
Hashim, A. M.
Abdullah, J. M.
Zhao, F.
Cheong, K. Y.
Switching dynamics and conductance quantization of aloe polysaccharides based device
description The switching behaviors of polysaccharides-based resistive random access memories change substantially depending on the electrical inputs. Here, the switching dynamics of the device are presented by varying the applied current compliance (CC) and voltage sweeping rate (ν). The results show that the device resistance in the low-resistance state (RLRS) can be modulated over five orders of magnitude by varying (CC) and ν in the typical current-voltage measurements. The (RLRS) modulation is attributed to the variable tunneling gap between the filament tip and the top electrode (TE). Conductance quantization is observed once a single-atomic contact with resistance ≤12.9kΩ is formed. Depending on the TEs, both integer and half-integer multiples of quantization levels are being observed, demonstrating its potential for multilevel data storage. In addition, the results unveil the stochastic strengthening and rupturing of the filament as modulated by periodic voltage pulses, thus enabling the device to operate in both volatile and nonvolatile modes. The device offers excellent switching dynamics for preliminary emulation of synapselike learning and forgetting behaviors in neural junctions for next-generation neuromorphic computing systems.
format Article
author Lim, Z. X.
Tayeb, I. A.
A. Hamid, Z. A.
Ain, M. F.
Hashim, A. M.
Abdullah, J. M.
Zhao, F.
Cheong, K. Y.
author_facet Lim, Z. X.
Tayeb, I. A.
A. Hamid, Z. A.
Ain, M. F.
Hashim, A. M.
Abdullah, J. M.
Zhao, F.
Cheong, K. Y.
author_sort Lim, Z. X.
title Switching dynamics and conductance quantization of aloe polysaccharides based device
title_short Switching dynamics and conductance quantization of aloe polysaccharides based device
title_full Switching dynamics and conductance quantization of aloe polysaccharides based device
title_fullStr Switching dynamics and conductance quantization of aloe polysaccharides based device
title_full_unstemmed Switching dynamics and conductance quantization of aloe polysaccharides based device
title_sort switching dynamics and conductance quantization of aloe polysaccharides based device
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2019
url http://eprints.utm.my/id/eprint/87877/
http://dx.doi.org/10.1109/TED.2019.2915106
_version_ 1685579002968801280
score 13.211869

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