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Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island

The single electron transistor (SET) is a promising nanoscale device that can be utilized to increase the speed of data processing in electronic chips. It operates by transfer of few and even one electron to the island. The island material is a factor affecting on the speed of its operation. Therefo...

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Main Authors: Khademhosseini, Vahideh, Dideban, Daryoosh, Ahmadi, Mohammad Taghi, Ismail, Razali
Format: Article
Published: Electrochemical Society Inc. 2019
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/87820/
http://dx.doi.org/10.1149/2.0041903jss
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spelling my.utm.878202020-11-30T13:21:16Z http://eprints.utm.my/id/eprint/87820/ Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island Khademhosseini, Vahideh Dideban, Daryoosh Ahmadi, Mohammad Taghi Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering The single electron transistor (SET) is a promising nanoscale device that can be utilized to increase the speed of data processing in electronic chips. It operates by transfer of few and even one electron to the island. The island material is a factor affecting on the speed of its operation. Therefore carbon nanotube (CNT) with high electron mobility can realize its fast processing speed. The CNT bandgap has indirectly proportional to its diameter and consequently its chiral indexes (n, m) presents a significant impact on the coulomb blockade (CB) range and also coulomb diamonds areas. In this research, an analytical model for the current in SET-CNT device is derived and the impact of chiral indexes on its operation is investigated. Furthermore a simulation study is carried out to report the results of the variation in CNT length and applied gate voltage on the proposed device performance. Electrochemical Society Inc. 2019 Article PeerReviewed Khademhosseini, Vahideh and Dideban, Daryoosh and Ahmadi, Mohammad Taghi and Ismail, Razali (2019) Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island. ECS Journal of Solid State Science and Technology, 8 (3). M26-M29. ISSN 2162-8769 http://dx.doi.org/10.1149/2.0041903jss
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Khademhosseini, Vahideh
Dideban, Daryoosh
Ahmadi, Mohammad Taghi
Ismail, Razali
Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island
description The single electron transistor (SET) is a promising nanoscale device that can be utilized to increase the speed of data processing in electronic chips. It operates by transfer of few and even one electron to the island. The island material is a factor affecting on the speed of its operation. Therefore carbon nanotube (CNT) with high electron mobility can realize its fast processing speed. The CNT bandgap has indirectly proportional to its diameter and consequently its chiral indexes (n, m) presents a significant impact on the coulomb blockade (CB) range and also coulomb diamonds areas. In this research, an analytical model for the current in SET-CNT device is derived and the impact of chiral indexes on its operation is investigated. Furthermore a simulation study is carried out to report the results of the variation in CNT length and applied gate voltage on the proposed device performance.
format Article
author Khademhosseini, Vahideh
Dideban, Daryoosh
Ahmadi, Mohammad Taghi
Ismail, Razali
author_facet Khademhosseini, Vahideh
Dideban, Daryoosh
Ahmadi, Mohammad Taghi
Ismail, Razali
author_sort Khademhosseini, Vahideh
title Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island
title_short Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island
title_full Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island
title_fullStr Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island
title_full_unstemmed Impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island
title_sort impact of chiral indices on the performance of single electron transistor utilizing carbon nanotube island
publisher Electrochemical Society Inc.
publishDate 2019
url http://eprints.utm.my/id/eprint/87820/
http://dx.doi.org/10.1149/2.0041903jss
_version_ 1685578994482675712
score 13.251813

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