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Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes

Fabrication processes have been developed to form the tunnel barriers in the suspended multi-wall carbon nanotubes (MWCNTs). Individual MWCNTs are positioned under the optical microscope to bridge them between the two metal electrodes. The tunnel barrier is formed by irradiating them with focused Ga...

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Main Authors: Ghazali, Norizzawati M., Tomizawa, Hiroshi, Hagiwara, Noriyuki, Suzuki, Katsuya, Hashim, Abdul M., Yamaguchi, Tomohiro, Akita, Seiji, Ishibashi, Koji
Format: Article
Language:English
Published: American Institute of Physics Inc. 2019
Subjects:
T Technology (General)
Online Access:http://eprints.utm.my/id/eprint/87810/1/AbdulManafHashim2019_FabricationofTunnelBarriersandSingleElectron.pdf
http://eprints.utm.my/id/eprint/87810/
http://dx.doi.org/10.1063/1.5120816
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spelling my.utm.878102020-11-30T13:21:10Z http://eprints.utm.my/id/eprint/87810/ Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes Ghazali, Norizzawati M. Tomizawa, Hiroshi Hagiwara, Noriyuki Suzuki, Katsuya Hashim, Abdul M. Yamaguchi, Tomohiro Akita, Seiji Ishibashi, Koji T Technology (General) Fabrication processes have been developed to form the tunnel barriers in the suspended multi-wall carbon nanotubes (MWCNTs). Individual MWCNTs are positioned under the optical microscope to bridge them between the two metal electrodes. The tunnel barrier is formed by irradiating them with focused Ga ion beam (FIB), and its characteristics are evaluated with the resistance increase by the irradiation and the barrier height. It is found that those values depend not only on the dose of the Ga ions, but also on a diameter of the MWCNT. The single electron transistors (SETs) are fabricated by forming the double barriers in the suspended MWCNT. We find some devices show regular and stable SET behaviours. American Institute of Physics Inc. 2019-10 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/87810/1/AbdulManafHashim2019_FabricationofTunnelBarriersandSingleElectron.pdf Ghazali, Norizzawati M. and Tomizawa, Hiroshi and Hagiwara, Noriyuki and Suzuki, Katsuya and Hashim, Abdul M. and Yamaguchi, Tomohiro and Akita, Seiji and Ishibashi, Koji (2019) Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes. AIP Advances, 9 (10). p. 105015. ISSN 2158-3226 http://dx.doi.org/10.1063/1.5120816
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic T Technology (General)
spellingShingle T Technology (General)
Ghazali, Norizzawati M.
Tomizawa, Hiroshi
Hagiwara, Noriyuki
Suzuki, Katsuya
Hashim, Abdul M.
Yamaguchi, Tomohiro
Akita, Seiji
Ishibashi, Koji
Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes
description Fabrication processes have been developed to form the tunnel barriers in the suspended multi-wall carbon nanotubes (MWCNTs). Individual MWCNTs are positioned under the optical microscope to bridge them between the two metal electrodes. The tunnel barrier is formed by irradiating them with focused Ga ion beam (FIB), and its characteristics are evaluated with the resistance increase by the irradiation and the barrier height. It is found that those values depend not only on the dose of the Ga ions, but also on a diameter of the MWCNT. The single electron transistors (SETs) are fabricated by forming the double barriers in the suspended MWCNT. We find some devices show regular and stable SET behaviours.
format Article
author Ghazali, Norizzawati M.
Tomizawa, Hiroshi
Hagiwara, Noriyuki
Suzuki, Katsuya
Hashim, Abdul M.
Yamaguchi, Tomohiro
Akita, Seiji
Ishibashi, Koji
author_facet Ghazali, Norizzawati M.
Tomizawa, Hiroshi
Hagiwara, Noriyuki
Suzuki, Katsuya
Hashim, Abdul M.
Yamaguchi, Tomohiro
Akita, Seiji
Ishibashi, Koji
author_sort Ghazali, Norizzawati M.
title Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes
title_short Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes
title_full Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes
title_fullStr Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes
title_full_unstemmed Fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes
title_sort fabrication of tunnel barriers and single electron transistors in suspended multi-wall carbon nanotubes
publisher American Institute of Physics Inc.
publishDate 2019
url http://eprints.utm.my/id/eprint/87810/1/AbdulManafHashim2019_FabricationofTunnelBarriersandSingleElectron.pdf
http://eprints.utm.my/id/eprint/87810/
http://dx.doi.org/10.1063/1.5120816
_version_ 1685578992944414720
score 13.211869

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