Enhancement of nano-RC switching delay due to the resistance blow-up in ingaas
RC and transit-time delays in a nanocircuit, where the resistor is a few nanometers in length, are evaluated taking into account the velocity and current saturation and applied to RC switching delay in InGaAs heterojunction field effect transistor (HFET). Transit time delay is the dominant factor in...
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| Main Authors: | , , |
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| 格式: | Article |
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World Scientific Publishing, Singapore
2007
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| 在線閱讀: | http://eprints.utm.my/id/eprint/8652/ http://dx.doi.org/10.1142/S1793292007000568 |
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