Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure

Unlike graphene which requires redesigned fabrication technique, silicene is predicted to be compatible with the silicon wafer technology. However, similar to graphene, the gapless properties of silicene hinder its application as field-effect transistors (FETs). By employing nearest neighbour tight-...

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Main Authors: Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., Tan, M. L. P.
Format: Article
Published: Elsevier B. V. 2020
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Online Access:http://eprints.utm.my/id/eprint/86310/
https://dx.doi.org/10.1016/j.physe.2019.113731
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spelling my.utm.863102020-10-13T01:54:03Z http://eprints.utm.my/id/eprint/86310/ Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure Chuan, M. W. Wong, K. L. Hamzah, A. Rusli, S. Alias, N. E. Lim, C. S. Tan, M. L. P. TK Electrical engineering. Electronics Nuclear engineering Unlike graphene which requires redesigned fabrication technique, silicene is predicted to be compatible with the silicon wafer technology. However, similar to graphene, the gapless properties of silicene hinder its application as field-effect transistors (FETs). By employing nearest neighbour tight-binding (NNTB) approach and Landuaer-Büttiker formalism, the analytical equations for electronic band structure, density of states (DOS), intrinsic carrier concentration, intrinsic velocity and ideal ballistic I–V characteristics have been derived. The simulated results using MATLAB show that a band gap of 0.78eV has been induced in uniformly doped silicene with aluminium (AlSi3NW) in the zigzag direction. The device performance metrics extracted from the current-voltage (I–V) characteristics are subthreshold swing of 60mV/decade and threshold voltage of 0.65V under ideal conditions at room temperature. The results indicate that AlSi3NW device possesses good channel control and effective switching behaviour. The proposed model demonstrates that AlSi3NW is a potential candidate for future nanoelectronic applications. Elsevier B. V. 2020-02 Article PeerReviewed Chuan, M. W. and Wong, K. L. and Hamzah, A. and Rusli, S. and Alias, N. E. and Lim, C. S. and Tan, M. L. P. (2020) Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure. Physica E: Low-Dimensional Systems and Nanostructures, 116 . ISSN 1386-9477 https://dx.doi.org/10.1016/j.physe.2019.113731 DOI:10.1016/j.physe.2019.113731
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Chuan, M. W.
Wong, K. L.
Hamzah, A.
Rusli, S.
Alias, N. E.
Lim, C. S.
Tan, M. L. P.
Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure
description Unlike graphene which requires redesigned fabrication technique, silicene is predicted to be compatible with the silicon wafer technology. However, similar to graphene, the gapless properties of silicene hinder its application as field-effect transistors (FETs). By employing nearest neighbour tight-binding (NNTB) approach and Landuaer-Büttiker formalism, the analytical equations for electronic band structure, density of states (DOS), intrinsic carrier concentration, intrinsic velocity and ideal ballistic I–V characteristics have been derived. The simulated results using MATLAB show that a band gap of 0.78eV has been induced in uniformly doped silicene with aluminium (AlSi3NW) in the zigzag direction. The device performance metrics extracted from the current-voltage (I–V) characteristics are subthreshold swing of 60mV/decade and threshold voltage of 0.65V under ideal conditions at room temperature. The results indicate that AlSi3NW device possesses good channel control and effective switching behaviour. The proposed model demonstrates that AlSi3NW is a potential candidate for future nanoelectronic applications.
format Article
author Chuan, M. W.
Wong, K. L.
Hamzah, A.
Rusli, S.
Alias, N. E.
Lim, C. S.
Tan, M. L. P.
author_facet Chuan, M. W.
Wong, K. L.
Hamzah, A.
Rusli, S.
Alias, N. E.
Lim, C. S.
Tan, M. L. P.
author_sort Chuan, M. W.
title Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure
title_short Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure
title_full Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure
title_fullStr Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure
title_full_unstemmed Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure
title_sort electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure
publisher Elsevier B. V.
publishDate 2020
url http://eprints.utm.my/id/eprint/86310/
https://dx.doi.org/10.1016/j.physe.2019.113731
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score 13.211869