Staff View: Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate

Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate

Silicon quantum dots have been grown on corning glass(7059) substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at sufficiently low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 min...

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Main Authors:	Sakrani, Samsudi, Lim, Qiao Jie, Sumpono, Imam
Format:	Article
Language:	English
Published:	Ibnu Sina Institute for Fundamental Science Studies 2007
Subjects:	Q Science (General)
Online Access:	http://eprints.utm.my/id/eprint/8164/1/SSakrani2007-SiliconSelfAssembledGrowthofQuantum.pdf http://eprints.utm.my/id/eprint/8164/ http://jfs.ibnusina.utm.my/index.php/jfs
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spelling	my.utm.81642014-01-15T08:02:38Z http://eprints.utm.my/id/eprint/8164/ Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate Sakrani, Samsudi Lim, Qiao Jie Sumpono, Imam Q Science (General) Silicon quantum dots have been grown on corning glass(7059) substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at sufficiently low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, followed by a further growth of stable islands known as quantum dots, with the measured radii comparable to the predicted values. Other measurement results confirmed the existence of these dots, including the bandgap energy âˆ¼ 1.80 eV from PL and a 2% at. silicon from EDX and possible amorphous from XRD. The nucleation parameters were predicted as follows: Free energy change per unit volume âˆ†Gv = 2.64x104 Jmol-1; Surface energies per unit area, Î³LN = 1.48 Jm-2, Î³NS = 20.0 - 90.0 Jm-2 and Î³LS = 0.42 x 10-2 Jm-2; Critical energies âˆ†G* = 7.53x10-17 - 8.31x10-14 J; Critical radii r* = 9.0- 97.0 nm. This experimental evidence strongly support the early stage growth model of silicon quantum dot deposited on corning glass substrate Ibnu Sina Institute for Fundamental Science Studies 2007 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/8164/1/SSakrani2007-SiliconSelfAssembledGrowthofQuantum.pdf Sakrani, Samsudi and Lim, Qiao Jie and Sumpono, Imam (2007) Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate. Journal of Fundamental Sciences, 3 (1). pp. 158-165. ISSN 1823-626X http://jfs.ibnusina.utm.my/index.php/jfs
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
language	English
topic	Q Science (General)
spellingShingle	Q Science (General) Sakrani, Samsudi Lim, Qiao Jie Sumpono, Imam Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate
description	Silicon quantum dots have been grown on corning glass(7059) substrate using a self-assembly method of physical vapour deposition. The samples were fabricated at sufficiently low sputtering rate and varying experimental conditions. Apparently, the onset of nucleation took place during the first 5 minutes of deposition, followed by a further growth of stable islands known as quantum dots, with the measured radii comparable to the predicted values. Other measurement results confirmed the existence of these dots, including the bandgap energy âˆ¼ 1.80 eV from PL and a 2% at. silicon from EDX and possible amorphous from XRD. The nucleation parameters were predicted as follows: Free energy change per unit volume âˆ†Gv = 2.64x104 Jmol-1; Surface energies per unit area, Î³LN = 1.48 Jm-2, Î³NS = 20.0 - 90.0 Jm-2 and Î³LS = 0.42 x 10-2 Jm-2; Critical energies âˆ†G* = 7.53x10-17 - 8.31x10-14 J; Critical radii r* = 9.0- 97.0 nm. This experimental evidence strongly support the early stage growth model of silicon quantum dot deposited on corning glass substrate
format	Article
author	Sakrani, Samsudi Lim, Qiao Jie Sumpono, Imam
author_facet	Sakrani, Samsudi Lim, Qiao Jie Sumpono, Imam
author_sort	Sakrani, Samsudi
title	Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate
title_short	Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate
title_full	Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate
title_fullStr	Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate
title_full_unstemmed	Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate
title_sort	silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate
publisher	Ibnu Sina Institute for Fundamental Science Studies
publishDate	2007
url	http://eprints.utm.my/id/eprint/8164/1/SSakrani2007-SiliconSelfAssembledGrowthofQuantum.pdf http://eprints.utm.my/id/eprint/8164/ http://jfs.ibnusina.utm.my/index.php/jfs
_version_	1643644931919577088
score	13.211869

Silicon self-assembled growth of quantum dots grown on corning glass (7059) substrate

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